Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells

In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a minimal reflectance of 4.6% can be achieved at the MACE time of 9 min. The height of the nanostructures is below 500 nm, unlike the height of micrometers needed to reach the same level of reflectance for the black silicon on planar wafers. A stacked layer of silicon nitride (SiN(x)) grown by inductively-coupled plasma chemical vapor deposition (ICPCVD) and aluminum oxide (Al(2)O(3)) by spatial atomic layer deposition was deposited on the black silicon wafers for passivation and antireflection. The 3 min MACE etched black silicon wafer with a nanostructure height of less than 300 nm passivated by the SiN(x)/Al(2)O(3) layer showed a low surface recombination rate of 43.6 cm/s. Further optimizing the thickness of ICPCVD-SiN(x) layer led to a reflectance of 1.4%. The hybrid black silicon with a small nanostructure size, low reflectance, and low surface recombination rate demonstrates great potential for applications in optoelectronic devices.