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Room temperature strain-induced Landau levels in graphene on a wafer-scale platform

Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudoma...

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Autores principales: Nigge, P., Qu, A. C., Lantagne-Hurtubise, É., Mårsell, E., Link, S., Tom, G., Zonno, M., Michiardi, M., Schneider, M., Zhdanovich, S., Levy, G., Starke, U., Gutiérrez, C., Bonn, D., Burke, S. A., Franz, M., Damascelli, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6839937/
https://www.ncbi.nlm.nih.gov/pubmed/31723598
http://dx.doi.org/10.1126/sciadv.aaw5593
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author Nigge, P.
Qu, A. C.
Lantagne-Hurtubise, É.
Mårsell, E.
Link, S.
Tom, G.
Zonno, M.
Michiardi, M.
Schneider, M.
Zhdanovich, S.
Levy, G.
Starke, U.
Gutiérrez, C.
Bonn, D.
Burke, S. A.
Franz, M.
Damascelli, A.
author_facet Nigge, P.
Qu, A. C.
Lantagne-Hurtubise, É.
Mårsell, E.
Link, S.
Tom, G.
Zonno, M.
Michiardi, M.
Schneider, M.
Zhdanovich, S.
Levy, G.
Starke, U.
Gutiérrez, C.
Bonn, D.
Burke, S. A.
Franz, M.
Damascelli, A.
author_sort Nigge, P.
collection PubMed
description Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudomagnetic fields have been explored on the nano- and micrometer-scale using scanning probe and transport measurements. Heteroepitaxial strain, in contrast, is a wafer-scale engineering method. Here, we show that pseudomagnetic fields can be generated in graphene through wafer-scale epitaxial growth. Shallow triangular nanoprisms in the SiC substrate generate strain-induced uniform fields of 41 T, enabling the observation of strain-induced Landau levels at room temperature, as detected by angle-resolved photoemission spectroscopy, and confirmed by model calculations and scanning tunneling microscopy measurements. Our work demonstrates the feasibility of exploiting strain-induced quantum phases in two-dimensional Dirac materials on a wafer-scale platform, opening the field to new applications.
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spelling pubmed-68399372019-11-13 Room temperature strain-induced Landau levels in graphene on a wafer-scale platform Nigge, P. Qu, A. C. Lantagne-Hurtubise, É. Mårsell, E. Link, S. Tom, G. Zonno, M. Michiardi, M. Schneider, M. Zhdanovich, S. Levy, G. Starke, U. Gutiérrez, C. Bonn, D. Burke, S. A. Franz, M. Damascelli, A. Sci Adv Research Articles Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of a magnetic field. Previously, these strain-induced pseudomagnetic fields have been explored on the nano- and micrometer-scale using scanning probe and transport measurements. Heteroepitaxial strain, in contrast, is a wafer-scale engineering method. Here, we show that pseudomagnetic fields can be generated in graphene through wafer-scale epitaxial growth. Shallow triangular nanoprisms in the SiC substrate generate strain-induced uniform fields of 41 T, enabling the observation of strain-induced Landau levels at room temperature, as detected by angle-resolved photoemission spectroscopy, and confirmed by model calculations and scanning tunneling microscopy measurements. Our work demonstrates the feasibility of exploiting strain-induced quantum phases in two-dimensional Dirac materials on a wafer-scale platform, opening the field to new applications. American Association for the Advancement of Science 2019-11-08 /pmc/articles/PMC6839937/ /pubmed/31723598 http://dx.doi.org/10.1126/sciadv.aaw5593 Text en Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
spellingShingle Research Articles
Nigge, P.
Qu, A. C.
Lantagne-Hurtubise, É.
Mårsell, E.
Link, S.
Tom, G.
Zonno, M.
Michiardi, M.
Schneider, M.
Zhdanovich, S.
Levy, G.
Starke, U.
Gutiérrez, C.
Bonn, D.
Burke, S. A.
Franz, M.
Damascelli, A.
Room temperature strain-induced Landau levels in graphene on a wafer-scale platform
title Room temperature strain-induced Landau levels in graphene on a wafer-scale platform
title_full Room temperature strain-induced Landau levels in graphene on a wafer-scale platform
title_fullStr Room temperature strain-induced Landau levels in graphene on a wafer-scale platform
title_full_unstemmed Room temperature strain-induced Landau levels in graphene on a wafer-scale platform
title_short Room temperature strain-induced Landau levels in graphene on a wafer-scale platform
title_sort room temperature strain-induced landau levels in graphene on a wafer-scale platform
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6839937/
https://www.ncbi.nlm.nih.gov/pubmed/31723598
http://dx.doi.org/10.1126/sciadv.aaw5593
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