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Mechanism of Unstable Material Removal Modes in Micro Cutting of Silicon Carbide

This study conducts large-scale molecular dynamics (MD) simulations of micro cutting of single crystal 6H silicon carbide (SiC) with up to 19 million atoms to investigate the mechanism of unstable material removal modes within the transitional range of undeformed chip thickness in which either britt...

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Detalles Bibliográficos
Autores principales:	Zhao, Wei, Hong, Haibo, Wang, Hongzhi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843474/ https://www.ncbi.nlm.nih.gov/pubmed/31614898 http://dx.doi.org/10.3390/mi10100696

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