Cargando…
InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings
A variety of potential applications such as visible light communications require laser sources with a narrow linewidth and a single wavelength emission in the blue light region. The gallium nitride (GaN)-based distributed feedback laser diode (DFB-LD) is a promising light source that meets these req...
Autores principales: | , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843570/ https://www.ncbi.nlm.nih.gov/pubmed/31615101 http://dx.doi.org/10.3390/mi10100699 |
_version_ | 1783468246905651200 |
---|---|
author | Deng, Zejia Li, Junze Liao, Mingle Xie, Wuze Luo, Siyuan |
author_facet | Deng, Zejia Li, Junze Liao, Mingle Xie, Wuze Luo, Siyuan |
author_sort | Deng, Zejia |
collection | PubMed |
description | A variety of potential applications such as visible light communications require laser sources with a narrow linewidth and a single wavelength emission in the blue light region. The gallium nitride (GaN)-based distributed feedback laser diode (DFB-LD) is a promising light source that meets these requirements. Here, we present GaN DFB-LDs that share growth and fabrication processes and have surface gratings and sidewall gratings on the same epitaxial substrate, which makes LDs with different structures comparable. By electrical pulse pumping, single-peak emissions at 398.5 and 399.95 nm with a full width at half maximum (FWHM) of 0.32 and 0.23 nm were achieved, respectively. The surface and sidewall gratings were fabricated alongside the p-contact metal stripe by electrical beam lithography and inductively coupled plasma etching. DFB LDs with 2.5 μm ridge width exhibit a smaller FWHM than those with 5 and 10 μm ridge widths, indicating that the narrow ridge width is favorable for the narrowing of the line width of the DFB LD. The slope efficiency of the DFB LD with sidewall gratings is higher than that of surface grating DFB LDs with the same ridge width and period of gratings. Our experiment may provide a reliable and simple approach for optimizing gratings and GaN DFB-LDs. |
format | Online Article Text |
id | pubmed-6843570 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-68435702019-11-25 InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings Deng, Zejia Li, Junze Liao, Mingle Xie, Wuze Luo, Siyuan Micromachines (Basel) Article A variety of potential applications such as visible light communications require laser sources with a narrow linewidth and a single wavelength emission in the blue light region. The gallium nitride (GaN)-based distributed feedback laser diode (DFB-LD) is a promising light source that meets these requirements. Here, we present GaN DFB-LDs that share growth and fabrication processes and have surface gratings and sidewall gratings on the same epitaxial substrate, which makes LDs with different structures comparable. By electrical pulse pumping, single-peak emissions at 398.5 and 399.95 nm with a full width at half maximum (FWHM) of 0.32 and 0.23 nm were achieved, respectively. The surface and sidewall gratings were fabricated alongside the p-contact metal stripe by electrical beam lithography and inductively coupled plasma etching. DFB LDs with 2.5 μm ridge width exhibit a smaller FWHM than those with 5 and 10 μm ridge widths, indicating that the narrow ridge width is favorable for the narrowing of the line width of the DFB LD. The slope efficiency of the DFB LD with sidewall gratings is higher than that of surface grating DFB LDs with the same ridge width and period of gratings. Our experiment may provide a reliable and simple approach for optimizing gratings and GaN DFB-LDs. MDPI 2019-10-14 /pmc/articles/PMC6843570/ /pubmed/31615101 http://dx.doi.org/10.3390/mi10100699 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Deng, Zejia Li, Junze Liao, Mingle Xie, Wuze Luo, Siyuan InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings |
title | InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings |
title_full | InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings |
title_fullStr | InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings |
title_full_unstemmed | InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings |
title_short | InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings |
title_sort | ingan/gan distributed feedback laser diodes with surface gratings and sidewall gratings |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843570/ https://www.ncbi.nlm.nih.gov/pubmed/31615101 http://dx.doi.org/10.3390/mi10100699 |
work_keys_str_mv | AT dengzejia ingangandistributedfeedbacklaserdiodeswithsurfacegratingsandsidewallgratings AT lijunze ingangandistributedfeedbacklaserdiodeswithsurfacegratingsandsidewallgratings AT liaomingle ingangandistributedfeedbacklaserdiodeswithsurfacegratingsandsidewallgratings AT xiewuze ingangandistributedfeedbacklaserdiodeswithsurfacegratingsandsidewallgratings AT luosiyuan ingangandistributedfeedbacklaserdiodeswithsurfacegratingsandsidewallgratings |