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Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors
To investigate the behaviour of the organic memory transistors, graphene oxide (GO) was utilized as the floating gate in 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)-based organic memory transistors. A cross-linked, off-centre spin-coated and ozone-treated poly(methyl methacrylate) (...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843658/ https://www.ncbi.nlm.nih.gov/pubmed/31557870 http://dx.doi.org/10.3390/mi10100643 |
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author | Al-shawi, Amjad Alias, Maysoon Sayers, Paul Mabrook, Mohammed Fadhil |
author_facet | Al-shawi, Amjad Alias, Maysoon Sayers, Paul Mabrook, Mohammed Fadhil |
author_sort | Al-shawi, Amjad |
collection | PubMed |
description | To investigate the behaviour of the organic memory transistors, graphene oxide (GO) was utilized as the floating gate in 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)-based organic memory transistors. A cross-linked, off-centre spin-coated and ozone-treated poly(methyl methacrylate) (cPMMA) was used as the insulating layer. High mobility and negligible hysteresis with very clear transistor behaviour were observed for the control transistors. On the other hand, memory transistors exhibited clear large hysteresis which is increased with increasing programming voltage. The shifts in the threshold voltage of the transfer characteristics as well as the hysteresis in the output characteristics were attributed to the charging and discharging of the floating gate. The counter-clockwise direction of hysteresis indicates that the process of charging and discharging the floating gate take place through the semiconductor/insulator interface. A clear shift in the threshold voltage was observed when different voltage pulses were applied to the gate. The non-volatile behaviour of the memory transistors was investigated in terms of charge retention. The memory transistors exhibited a large memory window (~30 V), and high charge density of (9.15 × 10(11) cm(−2)). |
format | Online Article Text |
id | pubmed-6843658 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-68436582019-11-25 Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors Al-shawi, Amjad Alias, Maysoon Sayers, Paul Mabrook, Mohammed Fadhil Micromachines (Basel) Article To investigate the behaviour of the organic memory transistors, graphene oxide (GO) was utilized as the floating gate in 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)-based organic memory transistors. A cross-linked, off-centre spin-coated and ozone-treated poly(methyl methacrylate) (cPMMA) was used as the insulating layer. High mobility and negligible hysteresis with very clear transistor behaviour were observed for the control transistors. On the other hand, memory transistors exhibited clear large hysteresis which is increased with increasing programming voltage. The shifts in the threshold voltage of the transfer characteristics as well as the hysteresis in the output characteristics were attributed to the charging and discharging of the floating gate. The counter-clockwise direction of hysteresis indicates that the process of charging and discharging the floating gate take place through the semiconductor/insulator interface. A clear shift in the threshold voltage was observed when different voltage pulses were applied to the gate. The non-volatile behaviour of the memory transistors was investigated in terms of charge retention. The memory transistors exhibited a large memory window (~30 V), and high charge density of (9.15 × 10(11) cm(−2)). MDPI 2019-09-25 /pmc/articles/PMC6843658/ /pubmed/31557870 http://dx.doi.org/10.3390/mi10100643 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Al-shawi, Amjad Alias, Maysoon Sayers, Paul Mabrook, Mohammed Fadhil Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors |
title | Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors |
title_full | Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors |
title_fullStr | Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors |
title_full_unstemmed | Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors |
title_short | Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors |
title_sort | improved memory properties of graphene oxide-based organic memory transistors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843658/ https://www.ncbi.nlm.nih.gov/pubmed/31557870 http://dx.doi.org/10.3390/mi10100643 |
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