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Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors

To investigate the behaviour of the organic memory transistors, graphene oxide (GO) was utilized as the floating gate in 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)-based organic memory transistors. A cross-linked, off-centre spin-coated and ozone-treated poly(methyl methacrylate) (...

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Autores principales: Al-shawi, Amjad, Alias, Maysoon, Sayers, Paul, Mabrook, Mohammed Fadhil
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843658/
https://www.ncbi.nlm.nih.gov/pubmed/31557870
http://dx.doi.org/10.3390/mi10100643
_version_ 1783468267977834496
author Al-shawi, Amjad
Alias, Maysoon
Sayers, Paul
Mabrook, Mohammed Fadhil
author_facet Al-shawi, Amjad
Alias, Maysoon
Sayers, Paul
Mabrook, Mohammed Fadhil
author_sort Al-shawi, Amjad
collection PubMed
description To investigate the behaviour of the organic memory transistors, graphene oxide (GO) was utilized as the floating gate in 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)-based organic memory transistors. A cross-linked, off-centre spin-coated and ozone-treated poly(methyl methacrylate) (cPMMA) was used as the insulating layer. High mobility and negligible hysteresis with very clear transistor behaviour were observed for the control transistors. On the other hand, memory transistors exhibited clear large hysteresis which is increased with increasing programming voltage. The shifts in the threshold voltage of the transfer characteristics as well as the hysteresis in the output characteristics were attributed to the charging and discharging of the floating gate. The counter-clockwise direction of hysteresis indicates that the process of charging and discharging the floating gate take place through the semiconductor/insulator interface. A clear shift in the threshold voltage was observed when different voltage pulses were applied to the gate. The non-volatile behaviour of the memory transistors was investigated in terms of charge retention. The memory transistors exhibited a large memory window (~30 V), and high charge density of (9.15 × 10(11) cm(−2)).
format Online
Article
Text
id pubmed-6843658
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-68436582019-11-25 Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors Al-shawi, Amjad Alias, Maysoon Sayers, Paul Mabrook, Mohammed Fadhil Micromachines (Basel) Article To investigate the behaviour of the organic memory transistors, graphene oxide (GO) was utilized as the floating gate in 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)-based organic memory transistors. A cross-linked, off-centre spin-coated and ozone-treated poly(methyl methacrylate) (cPMMA) was used as the insulating layer. High mobility and negligible hysteresis with very clear transistor behaviour were observed for the control transistors. On the other hand, memory transistors exhibited clear large hysteresis which is increased with increasing programming voltage. The shifts in the threshold voltage of the transfer characteristics as well as the hysteresis in the output characteristics were attributed to the charging and discharging of the floating gate. The counter-clockwise direction of hysteresis indicates that the process of charging and discharging the floating gate take place through the semiconductor/insulator interface. A clear shift in the threshold voltage was observed when different voltage pulses were applied to the gate. The non-volatile behaviour of the memory transistors was investigated in terms of charge retention. The memory transistors exhibited a large memory window (~30 V), and high charge density of (9.15 × 10(11) cm(−2)). MDPI 2019-09-25 /pmc/articles/PMC6843658/ /pubmed/31557870 http://dx.doi.org/10.3390/mi10100643 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Al-shawi, Amjad
Alias, Maysoon
Sayers, Paul
Mabrook, Mohammed Fadhil
Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors
title Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors
title_full Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors
title_fullStr Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors
title_full_unstemmed Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors
title_short Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors
title_sort improved memory properties of graphene oxide-based organic memory transistors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843658/
https://www.ncbi.nlm.nih.gov/pubmed/31557870
http://dx.doi.org/10.3390/mi10100643
work_keys_str_mv AT alshawiamjad improvedmemorypropertiesofgrapheneoxidebasedorganicmemorytransistors
AT aliasmaysoon improvedmemorypropertiesofgrapheneoxidebasedorganicmemorytransistors
AT sayerspaul improvedmemorypropertiesofgrapheneoxidebasedorganicmemorytransistors
AT mabrookmohammedfadhil improvedmemorypropertiesofgrapheneoxidebasedorganicmemorytransistors