Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene

[Image: see text] Layered semiconductor gallium telluride (GaTe) undergoes a rapid structural transition to a degraded phase in ambient conditions, limiting its utility in devices such as optical switches. In this work, we demonstrate that the degradation process in GaTe flakes can be slowed down dr...

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Detalles Bibliográficos
Autores principales: Mercado, Elisha, Zhou, Yan, Xie, Yong, Zhao, Qinghua, Cai, Hui, Chen, Bin, Jie, Wanqi, Tongay, Sefaattin, Wang, Tao, Kuball, Martin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843706/
https://www.ncbi.nlm.nih.gov/pubmed/31720504
http://dx.doi.org/10.1021/acsomega.9b01752

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843706/
https://www.ncbi.nlm.nih.gov/pubmed/31720504
http://dx.doi.org/10.1021/acsomega.9b01752

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