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Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene
[Image: see text] Layered semiconductor gallium telluride (GaTe) undergoes a rapid structural transition to a degraded phase in ambient conditions, limiting its utility in devices such as optical switches. In this work, we demonstrate that the degradation process in GaTe flakes can be slowed down dr...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6843706/ https://www.ncbi.nlm.nih.gov/pubmed/31720504 http://dx.doi.org/10.1021/acsomega.9b01752 |