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Three‐dimensional characterization of the active volumes of PTW microDiamond, microSilicon, and Diode E dosimetry detectors using a proton microbeam

PURPOSE: The purpose of this work is the three‐dimensional characterization of the active volumes of commercial solid‐state dosimetry detectors. Detailed knowledge of the dimensions of the detector’s active volume as well as the detector housing is of particular interest for small‐field photon dosim...

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Detalles Bibliográficos
Autores principales: Poppinga, Daniela, Kranzer, Rafael, Ulrichs, Ann‐Britt, Delfs, Björn, Giesen, Ulrich, Langner, Frank, Poppe, Björn, Looe, Hui Khee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6851623/
https://www.ncbi.nlm.nih.gov/pubmed/31292964
http://dx.doi.org/10.1002/mp.13705
Descripción
Sumario:PURPOSE: The purpose of this work is the three‐dimensional characterization of the active volumes of commercial solid‐state dosimetry detectors. Detailed knowledge of the dimensions of the detector’s active volume as well as the detector housing is of particular interest for small‐field photon dosimetry. As shown in previous publications from different groups, the design of the detector housing influences the detector signal for small photon fields. Therefore, detailed knowledge of the active volume dimension and the surrounding materials form the basis for accurate Monte Carlo simulations of the detector. METHODS: A 10 MeV proton beam focused by the microbeam system of the Physikalisch‐Technische Bundesanstalt was used to measure two‐dimensional response maps of a synthetic diamond detector (microDiamond, type 60019, PTW Freiburg) and two silicon detectors (microSilicon, type 60023, PTW Freiburg and Diode E, type 60017, PTW Freiburg). In addition, the thickness of the active volume of the new microSilicon was measured using the method developed in a previous study. RESULTS: The analysis of the response maps leads to active area of 1.18 mm(2) for the Diode E, 1.75 mm(2) for the microSilicon, and 3.91 mm(2) for the microDiamond detector. The thickness of the active volume of the microSilicon detector was determined to be (17.8 ± 2) µm. CONCLUSIONS: This study provides detailed geometrical data of the dosimetric active volume of three different solid‐state detector types.