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Potential modulations in flatland: near-infrared sensitization of MoS(2) phototransistors by a solvatochromic dye directly tethered to sulfur vacancies
Near-infrared sensitization of monolayer MoS(2) is here achieved via the covalent attachment of a novel heteroleptic nickel bis-dithiolene complex into sulfur vacancies in the MoS(2) structure. Photocurrent action spectroscopy of the sensitized films reveals a discreet contribution from the sensitiz...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6853947/ https://www.ncbi.nlm.nih.gov/pubmed/31723200 http://dx.doi.org/10.1038/s41598-019-53186-2 |
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author | Dalgleish, Simon Reissig, Louisa Shuku, Yoshiaki Ligorio, Giovanni Awaga, Kunio List-Kratochvil, Emil J. W. |
author_facet | Dalgleish, Simon Reissig, Louisa Shuku, Yoshiaki Ligorio, Giovanni Awaga, Kunio List-Kratochvil, Emil J. W. |
author_sort | Dalgleish, Simon |
collection | PubMed |
description | Near-infrared sensitization of monolayer MoS(2) is here achieved via the covalent attachment of a novel heteroleptic nickel bis-dithiolene complex into sulfur vacancies in the MoS(2) structure. Photocurrent action spectroscopy of the sensitized films reveals a discreet contribution from the sensitizer dye centred around 1300 nm (0.95 eV), well below the bandgap of MoS(2) (2.1 eV), corresponding to the excitation of the monoanionic dithiolene complex. A mechanism of conductivity enhancement is proposed based on a photo-induced flattening of the corrugated energy landscape present at sulfur vacancy defect sites within the MoS(2) due to a dipole change within the dye molecule upon photoexcitation. This method of sensitization might be readily extended to other functional molecules that can impart a change to the dielectric environment at the MoS(2) surface under stimulation, thereby extending the breadth of detector applications for MoS(2) and other transition metal dichalcogenides. |
format | Online Article Text |
id | pubmed-6853947 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-68539472019-11-19 Potential modulations in flatland: near-infrared sensitization of MoS(2) phototransistors by a solvatochromic dye directly tethered to sulfur vacancies Dalgleish, Simon Reissig, Louisa Shuku, Yoshiaki Ligorio, Giovanni Awaga, Kunio List-Kratochvil, Emil J. W. Sci Rep Article Near-infrared sensitization of monolayer MoS(2) is here achieved via the covalent attachment of a novel heteroleptic nickel bis-dithiolene complex into sulfur vacancies in the MoS(2) structure. Photocurrent action spectroscopy of the sensitized films reveals a discreet contribution from the sensitizer dye centred around 1300 nm (0.95 eV), well below the bandgap of MoS(2) (2.1 eV), corresponding to the excitation of the monoanionic dithiolene complex. A mechanism of conductivity enhancement is proposed based on a photo-induced flattening of the corrugated energy landscape present at sulfur vacancy defect sites within the MoS(2) due to a dipole change within the dye molecule upon photoexcitation. This method of sensitization might be readily extended to other functional molecules that can impart a change to the dielectric environment at the MoS(2) surface under stimulation, thereby extending the breadth of detector applications for MoS(2) and other transition metal dichalcogenides. Nature Publishing Group UK 2019-11-13 /pmc/articles/PMC6853947/ /pubmed/31723200 http://dx.doi.org/10.1038/s41598-019-53186-2 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Dalgleish, Simon Reissig, Louisa Shuku, Yoshiaki Ligorio, Giovanni Awaga, Kunio List-Kratochvil, Emil J. W. Potential modulations in flatland: near-infrared sensitization of MoS(2) phototransistors by a solvatochromic dye directly tethered to sulfur vacancies |
title | Potential modulations in flatland: near-infrared sensitization of MoS(2) phototransistors by a solvatochromic dye directly tethered to sulfur vacancies |
title_full | Potential modulations in flatland: near-infrared sensitization of MoS(2) phototransistors by a solvatochromic dye directly tethered to sulfur vacancies |
title_fullStr | Potential modulations in flatland: near-infrared sensitization of MoS(2) phototransistors by a solvatochromic dye directly tethered to sulfur vacancies |
title_full_unstemmed | Potential modulations in flatland: near-infrared sensitization of MoS(2) phototransistors by a solvatochromic dye directly tethered to sulfur vacancies |
title_short | Potential modulations in flatland: near-infrared sensitization of MoS(2) phototransistors by a solvatochromic dye directly tethered to sulfur vacancies |
title_sort | potential modulations in flatland: near-infrared sensitization of mos(2) phototransistors by a solvatochromic dye directly tethered to sulfur vacancies |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6853947/ https://www.ncbi.nlm.nih.gov/pubmed/31723200 http://dx.doi.org/10.1038/s41598-019-53186-2 |
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