Cargando…
Transfer-Free Graphene-Like Thin Films on GaN LED Epiwafers Grown by PECVD Using an Ultrathin Pt Catalyst for Transparent Electrode Applications
In this work, we grew transfer-free graphene-like thin films (GLTFs) directly on gallium nitride (GaN)/sapphire light-emitting diode (LED) substrates. Their electrical, optical and thermal properties were studied for transparent electrode applications. Ultrathin platinum (2 nm) was used as the catal...
Autores principales: | Xiong, Fangzhu, Guo, Weiling, Feng, Shiwei, Li, Xuan, Du, Zaifa, Wang, Le, Deng, Jun, Sun, Jie |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6862194/ https://www.ncbi.nlm.nih.gov/pubmed/31661874 http://dx.doi.org/10.3390/ma12213533 |
Ejemplares similares
-
Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor
por: Fu, Yafei, et al.
Publicado: (2019) -
Graphene as a Transparent Conductive Electrode in GaN-Based LEDs
por: Zhang, Hehe, et al.
Publicado: (2022) -
Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED
por: Kim, Su Jin, et al.
Publicado: (2014) -
Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface
por: Nishio, Kengo, et al.
Publicado: (2018) -
Influence of Oxygen–Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO(2) Gate Insulator
por: Cho, Geunho, et al.
Publicado: (2019)