Cargando…

Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure

Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm,...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, Cheng-Jyun, You, Hsin-Chiang, Lin, Kuan, Ou, Jen-Hung, Chao, Keng-Hsien, Ko, Fu-Hsiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6862527/
https://www.ncbi.nlm.nih.gov/pubmed/31694214
http://dx.doi.org/10.3390/ma12213639
_version_ 1783471575093215232
author Wang, Cheng-Jyun
You, Hsin-Chiang
Lin, Kuan
Ou, Jen-Hung
Chao, Keng-Hsien
Ko, Fu-Hsiang
author_facet Wang, Cheng-Jyun
You, Hsin-Chiang
Lin, Kuan
Ou, Jen-Hung
Chao, Keng-Hsien
Ko, Fu-Hsiang
author_sort Wang, Cheng-Jyun
collection PubMed
description Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10(−7) A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases.
format Online
Article
Text
id pubmed-6862527
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-68625272019-12-05 Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure Wang, Cheng-Jyun You, Hsin-Chiang Lin, Kuan Ou, Jen-Hung Chao, Keng-Hsien Ko, Fu-Hsiang Materials (Basel) Article Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10(−7) A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases. MDPI 2019-11-05 /pmc/articles/PMC6862527/ /pubmed/31694214 http://dx.doi.org/10.3390/ma12213639 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wang, Cheng-Jyun
You, Hsin-Chiang
Lin, Kuan
Ou, Jen-Hung
Chao, Keng-Hsien
Ko, Fu-Hsiang
Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure
title Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure
title_full Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure
title_fullStr Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure
title_full_unstemmed Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure
title_short Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure
title_sort highly transparent and surface-plasmon-enhanced visible-photodetector based on zinc oxide thin-film transistors with heterojunction structure
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6862527/
https://www.ncbi.nlm.nih.gov/pubmed/31694214
http://dx.doi.org/10.3390/ma12213639
work_keys_str_mv AT wangchengjyun highlytransparentandsurfaceplasmonenhancedvisiblephotodetectorbasedonzincoxidethinfilmtransistorswithheterojunctionstructure
AT youhsinchiang highlytransparentandsurfaceplasmonenhancedvisiblephotodetectorbasedonzincoxidethinfilmtransistorswithheterojunctionstructure
AT linkuan highlytransparentandsurfaceplasmonenhancedvisiblephotodetectorbasedonzincoxidethinfilmtransistorswithheterojunctionstructure
AT oujenhung highlytransparentandsurfaceplasmonenhancedvisiblephotodetectorbasedonzincoxidethinfilmtransistorswithheterojunctionstructure
AT chaokenghsien highlytransparentandsurfaceplasmonenhancedvisiblephotodetectorbasedonzincoxidethinfilmtransistorswithheterojunctionstructure
AT kofuhsiang highlytransparentandsurfaceplasmonenhancedvisiblephotodetectorbasedonzincoxidethinfilmtransistorswithheterojunctionstructure