Cargando…
Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure
Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm,...
Autores principales: | , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6862527/ https://www.ncbi.nlm.nih.gov/pubmed/31694214 http://dx.doi.org/10.3390/ma12213639 |
_version_ | 1783471575093215232 |
---|---|
author | Wang, Cheng-Jyun You, Hsin-Chiang Lin, Kuan Ou, Jen-Hung Chao, Keng-Hsien Ko, Fu-Hsiang |
author_facet | Wang, Cheng-Jyun You, Hsin-Chiang Lin, Kuan Ou, Jen-Hung Chao, Keng-Hsien Ko, Fu-Hsiang |
author_sort | Wang, Cheng-Jyun |
collection | PubMed |
description | Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10(−7) A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases. |
format | Online Article Text |
id | pubmed-6862527 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-68625272019-12-05 Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure Wang, Cheng-Jyun You, Hsin-Chiang Lin, Kuan Ou, Jen-Hung Chao, Keng-Hsien Ko, Fu-Hsiang Materials (Basel) Article Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10(−7) A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases. MDPI 2019-11-05 /pmc/articles/PMC6862527/ /pubmed/31694214 http://dx.doi.org/10.3390/ma12213639 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Wang, Cheng-Jyun You, Hsin-Chiang Lin, Kuan Ou, Jen-Hung Chao, Keng-Hsien Ko, Fu-Hsiang Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure |
title | Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure |
title_full | Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure |
title_fullStr | Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure |
title_full_unstemmed | Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure |
title_short | Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure |
title_sort | highly transparent and surface-plasmon-enhanced visible-photodetector based on zinc oxide thin-film transistors with heterojunction structure |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6862527/ https://www.ncbi.nlm.nih.gov/pubmed/31694214 http://dx.doi.org/10.3390/ma12213639 |
work_keys_str_mv | AT wangchengjyun highlytransparentandsurfaceplasmonenhancedvisiblephotodetectorbasedonzincoxidethinfilmtransistorswithheterojunctionstructure AT youhsinchiang highlytransparentandsurfaceplasmonenhancedvisiblephotodetectorbasedonzincoxidethinfilmtransistorswithheterojunctionstructure AT linkuan highlytransparentandsurfaceplasmonenhancedvisiblephotodetectorbasedonzincoxidethinfilmtransistorswithheterojunctionstructure AT oujenhung highlytransparentandsurfaceplasmonenhancedvisiblephotodetectorbasedonzincoxidethinfilmtransistorswithheterojunctionstructure AT chaokenghsien highlytransparentandsurfaceplasmonenhancedvisiblephotodetectorbasedonzincoxidethinfilmtransistorswithheterojunctionstructure AT kofuhsiang highlytransparentandsurfaceplasmonenhancedvisiblephotodetectorbasedonzincoxidethinfilmtransistorswithheterojunctionstructure |