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The dualism between adatom- and vacancy-based single crystal growth models

In homoepitaxial crystal growth, four basic growth morphologies (idealized growth modes) have been established that describe the deposition of atoms on single crystal surfaces: step-flow, layer-by-layer, mound formation, and random/self-affine growth. Mound formation leads to nano-scale surface patt...

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Detalles Bibliográficos
Autores principales: Rost, Marcel J., Jacobse, Leon, Koper, Marc T. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6868172/
https://www.ncbi.nlm.nih.gov/pubmed/31748552
http://dx.doi.org/10.1038/s41467-019-13188-0

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