Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

In this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers (TAL) TZO/ITO/TZO. The TAL TFTs were found to combine the advan...

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Detalles Bibliográficos
Autores principales: Chen, Zhuofa, Han, Dedong, Zhang, Xing, Wang, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6868189/
https://www.ncbi.nlm.nih.gov/pubmed/31748555
http://dx.doi.org/10.1038/s41598-019-53766-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6868189/
https://www.ncbi.nlm.nih.gov/pubmed/31748555
http://dx.doi.org/10.1038/s41598-019-53766-2

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