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Light transmission and internal scattering in pulsed laser-etched partially-transparent silicon wafers

Continuing trend in silicon wafer thickness directed at cost reduction approaches basic boundaries created by: (a) mismatch between Al paste and Si wafer thermal expansion and (b) incomplete optical absorption. With its symmetrical front and back electrical contacts, the bifacial solar cell setup re...

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Autores principales: Rohaizar, Muhd Hatim, Sepeai, Suhaila, Surhada, Nurfarizza, Ludin, N.A., Ibrahim, M.A., Sopian, K., Zaidi, Saleem H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6872776/
https://www.ncbi.nlm.nih.gov/pubmed/31768436
http://dx.doi.org/10.1016/j.heliyon.2019.e02790
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author Rohaizar, Muhd Hatim
Sepeai, Suhaila
Surhada, Nurfarizza
Ludin, N.A.
Ibrahim, M.A.
Sopian, K.
Zaidi, Saleem H.
author_facet Rohaizar, Muhd Hatim
Sepeai, Suhaila
Surhada, Nurfarizza
Ludin, N.A.
Ibrahim, M.A.
Sopian, K.
Zaidi, Saleem H.
author_sort Rohaizar, Muhd Hatim
collection PubMed
description Continuing trend in silicon wafer thickness directed at cost reduction approaches basic boundaries created by: (a) mismatch between Al paste and Si wafer thermal expansion and (b) incomplete optical absorption. With its symmetrical front and back electrical contacts, the bifacial solar cell setup reduces stress due to mismatch thermal expansion, decreases metal use and increases high temperature efficiency. Efficiency improvement is accomplished in bifacial solar cells by capturing light from the back surface. Partially transparent wafers provide an option to improve near-infrared radiation absorption within Si wafer. To fully absorb optical radiation, three-dimensional texture of these kinds of wafers is essential. Pulsed laser interactions, thermal oxidation, and wet chemical etching are included in this research. A feature of its energy and pattern setup is the interaction of pulsed laser with Si, running at 1.064 μm wavelength and micro-second length. Two experimental settings were explored: (a) post-laser chemical etching with potassium hydro-oxide etching with thermal oxide as etching mask and (b) post-laser heat Si surface oxidation. Due to fast melting and recrystallization, laser pulsed processing inherently produces its own texture. Some of these spherically-shaped, randomly focused characteristics improve inner scattering and boost near-infrared absorption within the wafer. These characteristics are separated during chemical etching with the thermally-grown oxide layer as an etch mask. Comparison of optical absorption in both surfaces shows almost a rise in the magnitude of absorption in non-etched surfaces. Detailed optical (optical microscope and IR absorption), morphological (field emission scanning electron microscope) and heat imaging (far IR camera) analyses were performed to comprehend physical processes that contribute to near-IR absorption improvement. Such kinds of partially-transparent, three-dimensional textured Si wafers are anticipated to discover applications for bifacial solar cells as substrates.
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spelling pubmed-68727762019-11-25 Light transmission and internal scattering in pulsed laser-etched partially-transparent silicon wafers Rohaizar, Muhd Hatim Sepeai, Suhaila Surhada, Nurfarizza Ludin, N.A. Ibrahim, M.A. Sopian, K. Zaidi, Saleem H. Heliyon Article Continuing trend in silicon wafer thickness directed at cost reduction approaches basic boundaries created by: (a) mismatch between Al paste and Si wafer thermal expansion and (b) incomplete optical absorption. With its symmetrical front and back electrical contacts, the bifacial solar cell setup reduces stress due to mismatch thermal expansion, decreases metal use and increases high temperature efficiency. Efficiency improvement is accomplished in bifacial solar cells by capturing light from the back surface. Partially transparent wafers provide an option to improve near-infrared radiation absorption within Si wafer. To fully absorb optical radiation, three-dimensional texture of these kinds of wafers is essential. Pulsed laser interactions, thermal oxidation, and wet chemical etching are included in this research. A feature of its energy and pattern setup is the interaction of pulsed laser with Si, running at 1.064 μm wavelength and micro-second length. Two experimental settings were explored: (a) post-laser chemical etching with potassium hydro-oxide etching with thermal oxide as etching mask and (b) post-laser heat Si surface oxidation. Due to fast melting and recrystallization, laser pulsed processing inherently produces its own texture. Some of these spherically-shaped, randomly focused characteristics improve inner scattering and boost near-infrared absorption within the wafer. These characteristics are separated during chemical etching with the thermally-grown oxide layer as an etch mask. Comparison of optical absorption in both surfaces shows almost a rise in the magnitude of absorption in non-etched surfaces. Detailed optical (optical microscope and IR absorption), morphological (field emission scanning electron microscope) and heat imaging (far IR camera) analyses were performed to comprehend physical processes that contribute to near-IR absorption improvement. Such kinds of partially-transparent, three-dimensional textured Si wafers are anticipated to discover applications for bifacial solar cells as substrates. Elsevier 2019-11-20 /pmc/articles/PMC6872776/ /pubmed/31768436 http://dx.doi.org/10.1016/j.heliyon.2019.e02790 Text en © 2019 The Authors http://creativecommons.org/licenses/by-nc-nd/4.0/ This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
spellingShingle Article
Rohaizar, Muhd Hatim
Sepeai, Suhaila
Surhada, Nurfarizza
Ludin, N.A.
Ibrahim, M.A.
Sopian, K.
Zaidi, Saleem H.
Light transmission and internal scattering in pulsed laser-etched partially-transparent silicon wafers
title Light transmission and internal scattering in pulsed laser-etched partially-transparent silicon wafers
title_full Light transmission and internal scattering in pulsed laser-etched partially-transparent silicon wafers
title_fullStr Light transmission and internal scattering in pulsed laser-etched partially-transparent silicon wafers
title_full_unstemmed Light transmission and internal scattering in pulsed laser-etched partially-transparent silicon wafers
title_short Light transmission and internal scattering in pulsed laser-etched partially-transparent silicon wafers
title_sort light transmission and internal scattering in pulsed laser-etched partially-transparent silicon wafers
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6872776/
https://www.ncbi.nlm.nih.gov/pubmed/31768436
http://dx.doi.org/10.1016/j.heliyon.2019.e02790
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