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Secondary formation damage of low-pressure layer during commingled production in multilayered tight gas reservoirs

This paper experimentally investigates fluid back-flow behavior and formation damage during commingled production in multilayered tight gas reservoirs. The development of fluid back-flow in commingled tight gas reservoirs was simulated using a newly designed experimental platform. The results indica...

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Autores principales: Ding, Jingchen, Yan, Changhui, He, Yongming, Wang, Changcheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6879744/
https://www.ncbi.nlm.nih.gov/pubmed/31772221
http://dx.doi.org/10.1038/s41598-019-53940-6
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author Ding, Jingchen
Yan, Changhui
He, Yongming
Wang, Changcheng
author_facet Ding, Jingchen
Yan, Changhui
He, Yongming
Wang, Changcheng
author_sort Ding, Jingchen
collection PubMed
description This paper experimentally investigates fluid back-flow behavior and formation damage during commingled production in multilayered tight gas reservoirs. The development of fluid back-flow in commingled tight gas reservoirs was simulated using a newly designed experimental platform. The results indicate that when there is a pressure difference between different layers during commingled production from tight gas reservoir, water produced from the high-pressure layer will invade the low-pressure layer along with gas back-flow and will accumulate in the near-wellbore area. This will lead to an increase in water saturation and a decline in permeability in the low-pressure layer and result in a significant reduction in ultimate recovery. The outcomes of these experiments demonstrate that as well as the formation damage caused by the working fluid during drilling and fracturing, “Secondary Formation Damage” also occurs during commingled production in multilayered tight gas reservoirs. This secondary formation damage mainly occurs in the near-wellbore area of low-pressure layers and is more severe with greater proximity to the wellbore. Through further experimentation to assess the factors influencing secondary formation damage, it is shown that the degree of secondary formation damage increases with decreasing original formation pressure, original water saturation, and permeability in the lower-pressure layer.
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spelling pubmed-68797442019-12-05 Secondary formation damage of low-pressure layer during commingled production in multilayered tight gas reservoirs Ding, Jingchen Yan, Changhui He, Yongming Wang, Changcheng Sci Rep Article This paper experimentally investigates fluid back-flow behavior and formation damage during commingled production in multilayered tight gas reservoirs. The development of fluid back-flow in commingled tight gas reservoirs was simulated using a newly designed experimental platform. The results indicate that when there is a pressure difference between different layers during commingled production from tight gas reservoir, water produced from the high-pressure layer will invade the low-pressure layer along with gas back-flow and will accumulate in the near-wellbore area. This will lead to an increase in water saturation and a decline in permeability in the low-pressure layer and result in a significant reduction in ultimate recovery. The outcomes of these experiments demonstrate that as well as the formation damage caused by the working fluid during drilling and fracturing, “Secondary Formation Damage” also occurs during commingled production in multilayered tight gas reservoirs. This secondary formation damage mainly occurs in the near-wellbore area of low-pressure layers and is more severe with greater proximity to the wellbore. Through further experimentation to assess the factors influencing secondary formation damage, it is shown that the degree of secondary formation damage increases with decreasing original formation pressure, original water saturation, and permeability in the lower-pressure layer. Nature Publishing Group UK 2019-11-26 /pmc/articles/PMC6879744/ /pubmed/31772221 http://dx.doi.org/10.1038/s41598-019-53940-6 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Ding, Jingchen
Yan, Changhui
He, Yongming
Wang, Changcheng
Secondary formation damage of low-pressure layer during commingled production in multilayered tight gas reservoirs
title Secondary formation damage of low-pressure layer during commingled production in multilayered tight gas reservoirs
title_full Secondary formation damage of low-pressure layer during commingled production in multilayered tight gas reservoirs
title_fullStr Secondary formation damage of low-pressure layer during commingled production in multilayered tight gas reservoirs
title_full_unstemmed Secondary formation damage of low-pressure layer during commingled production in multilayered tight gas reservoirs
title_short Secondary formation damage of low-pressure layer during commingled production in multilayered tight gas reservoirs
title_sort secondary formation damage of low-pressure layer during commingled production in multilayered tight gas reservoirs
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6879744/
https://www.ncbi.nlm.nih.gov/pubmed/31772221
http://dx.doi.org/10.1038/s41598-019-53940-6
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