Gas-Source CVD Growth of Atomic Layered WS(2) from WF(6) and H(2)S Precursors with High Grain Size Uniformity

Two-dimensional (2D) transition-metal dichalcogenides have attracted a considerable amount of attention because of their potential for post-silicon device applications, as well as for exploring fundamental physics in an ideal 2D system. We tested the chemical vapour deposition (CVD) of WS(2) using t...

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Detalles Bibliográficos
Autores principales: Okada, Mitsuhiro, Okada, Naoya, Chang, Wen-Hsin, Endo, Takahiko, Ando, Atsushi, Shimizu, Tetsuo, Kubo, Toshitaka, Miyata, Yasumitsu, Irisawa, Toshifumi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6881408/
https://www.ncbi.nlm.nih.gov/pubmed/31776373
http://dx.doi.org/10.1038/s41598-019-54049-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6881408/
https://www.ncbi.nlm.nih.gov/pubmed/31776373
http://dx.doi.org/10.1038/s41598-019-54049-6

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