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Gas-Source CVD Growth of Atomic Layered WS(2) from WF(6) and H(2)S Precursors with High Grain Size Uniformity
Two-dimensional (2D) transition-metal dichalcogenides have attracted a considerable amount of attention because of their potential for post-silicon device applications, as well as for exploring fundamental physics in an ideal 2D system. We tested the chemical vapour deposition (CVD) of WS(2) using t...
Autores principales: | Okada, Mitsuhiro, Okada, Naoya, Chang, Wen-Hsin, Endo, Takahiko, Ando, Atsushi, Shimizu, Tetsuo, Kubo, Toshitaka, Miyata, Yasumitsu, Irisawa, Toshifumi |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6881408/ https://www.ncbi.nlm.nih.gov/pubmed/31776373 http://dx.doi.org/10.1038/s41598-019-54049-6 |
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