Silicon Mode-Selective Switch via Horizontal Metal-Oxide-Semiconductor Capacitor Incorporated With ENZ-ITO

A silicon mode-selective switch (MSS) is proposed by using a horizontal metal-oxide-semiconductor (MOS) capacitor incorporated with the epsilon-near-zero (ENZ) indium-tin-oxide (ITO). The carrier concentration of the double accumulation-layers in ITO can be adjusted via the applied gate-voltage to a...

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Detalles Bibliográficos
Autores principales: Jiang, Weifeng, Miao, Jinye, Li, Tao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6882911/
https://www.ncbi.nlm.nih.gov/pubmed/31780745
http://dx.doi.org/10.1038/s41598-019-54332-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6882911/
https://www.ncbi.nlm.nih.gov/pubmed/31780745
http://dx.doi.org/10.1038/s41598-019-54332-6

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