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Silicon Mode-Selective Switch via Horizontal Metal-Oxide-Semiconductor Capacitor Incorporated With ENZ-ITO
A silicon mode-selective switch (MSS) is proposed by using a horizontal metal-oxide-semiconductor (MOS) capacitor incorporated with the epsilon-near-zero (ENZ) indium-tin-oxide (ITO). The carrier concentration of the double accumulation-layers in ITO can be adjusted via the applied gate-voltage to a...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6882911/ https://www.ncbi.nlm.nih.gov/pubmed/31780745 http://dx.doi.org/10.1038/s41598-019-54332-6 |