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Amplified Spontaneous Emission Threshold Reduction and Operational Stability Improvement in CsPbBr(3) Nanocrystals Films by Hydrophobic Functionalization of the Substrate

The use of lead halide perovskites in optoelectronic and photonic devices is mainly limited by insufficient long-term stability of these materials. This issue is receiving growing attention, mainly owing to the operational stability improvement of lead halide perosvkites solar cells. On the contrary...

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Detalles Bibliográficos
Autores principales: De Giorgi, Maria Luisa, Krieg, Franziska, Kovalenko, Maksym V., Anni, Marco
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6884571/
https://www.ncbi.nlm.nih.gov/pubmed/31784597
http://dx.doi.org/10.1038/s41598-019-54412-7
Descripción
Sumario:The use of lead halide perovskites in optoelectronic and photonic devices is mainly limited by insufficient long-term stability of these materials. This issue is receiving growing attention, mainly owing to the operational stability improvement of lead halide perosvkites solar cells. On the contrary, fewer efforts are devoted to the stability improvement of light amplification and lasing. In this report we demonstrate that a simple hydrophobic functionalization of the substrates with hexamethyldisilazane (HMDS) allows to strongly improve the Amplified Spontaneous Emission (ASE) properties of drop cast CsPbBr(3) nanocrystal (NC) thin films. In particular we observe an ASE threshold decrease down to 45% of the value without treatment, an optical gain increase of up to 1.5 times and an ASE operational stability increase of up to 14 times. These results are ascribed to a closer NC packing in the films on HMDS treated substrate, allowing an improved energy transfer towards the larger NCs within the NC ensemble, and to the reduction of the film interaction with moisture. Our results propose hydrophobic functionalization of the substrates as an easy approach to lower the ASE and lasing thresholds, while simultaneously increasing the active material stability.