Displacement Talbot lithography for nano-engineering of III-nitride materials

Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabricat...

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Detalles Bibliográficos
Autores principales: Coulon, Pierre-Marie, Damilano, Benjamin, Alloing, Blandine, Chausse, Pierre, Walde, Sebastian, Enslin, Johannes, Armstrong, Robert, Vézian, Stéphane, Hagedorn, Sylvia, Wernicke, Tim, Massies, Jean, Zúñiga‐Pérez, Jesus, Weyers, Markus, Kneissl, Michael, Shields, Philip A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6885515/
https://www.ncbi.nlm.nih.gov/pubmed/31814992
http://dx.doi.org/10.1038/s41378-019-0101-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6885515/
https://www.ncbi.nlm.nih.gov/pubmed/31814992
http://dx.doi.org/10.1038/s41378-019-0101-2

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