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Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications

Low-dimensional III–V InAs/GaAs quantum dots (QDs) have been successfully applied to semiconductor saturable absorber mirrors (SESAMs) working at a 900–1310-nm wavelength range for ultrafast pulsed laser applications benefitting from their broad bandwidth, wavelength flexibility, and low saturation...

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Detalles Bibliográficos
Autores principales: Jiang, Cheng, Ning, Jiqiang, Li, Xiaohui, Wang, Xu, Zhang, Ziyang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6889259/
https://www.ncbi.nlm.nih.gov/pubmed/31792621
http://dx.doi.org/10.1186/s11671-019-3188-3
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author Jiang, Cheng
Ning, Jiqiang
Li, Xiaohui
Wang, Xu
Zhang, Ziyang
author_facet Jiang, Cheng
Ning, Jiqiang
Li, Xiaohui
Wang, Xu
Zhang, Ziyang
author_sort Jiang, Cheng
collection PubMed
description Low-dimensional III–V InAs/GaAs quantum dots (QDs) have been successfully applied to semiconductor saturable absorber mirrors (SESAMs) working at a 900–1310-nm wavelength range for ultrafast pulsed laser applications benefitting from their broad bandwidth, wavelength flexibility, and low saturation fluence. However, it is very challenging to obtain a high-performance QD-SESAM working at the longer wavelength range around 1550 nm due to the huge obstacle to epitaxy growth of the QD structures. In this work, for the first time, it is revealed that, the InAs/GaAs QD system designed for the 1550-nm light emission range, the very weak carrier relaxation process from the capping layers (CLs) to QDs is mainly responsible for the poor emission performance, according to which we have developed a short-period superlattice (In(0.20)Ga(0.80)As/In(0.30)Ga(0.70)As)(5) as the CL for the QDs and has realized ~ 10 times stronger emission at 1550 nm compared with the conventional InGaAs CL. Based on the developed QD structure, high-performance QD-SESAMs have been successfully achieved, exhibiting a very small saturation intensity of 13.7 MW/cm(2) and a large nonlinear modulation depth of 1.6 %, simultaneously, which enables the construction of a 1550-nm femtosecond mode-locked fiber lasers with excellent long-term working stability.
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spelling pubmed-68892592019-12-17 Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications Jiang, Cheng Ning, Jiqiang Li, Xiaohui Wang, Xu Zhang, Ziyang Nanoscale Res Lett Nano Express Low-dimensional III–V InAs/GaAs quantum dots (QDs) have been successfully applied to semiconductor saturable absorber mirrors (SESAMs) working at a 900–1310-nm wavelength range for ultrafast pulsed laser applications benefitting from their broad bandwidth, wavelength flexibility, and low saturation fluence. However, it is very challenging to obtain a high-performance QD-SESAM working at the longer wavelength range around 1550 nm due to the huge obstacle to epitaxy growth of the QD structures. In this work, for the first time, it is revealed that, the InAs/GaAs QD system designed for the 1550-nm light emission range, the very weak carrier relaxation process from the capping layers (CLs) to QDs is mainly responsible for the poor emission performance, according to which we have developed a short-period superlattice (In(0.20)Ga(0.80)As/In(0.30)Ga(0.70)As)(5) as the CL for the QDs and has realized ~ 10 times stronger emission at 1550 nm compared with the conventional InGaAs CL. Based on the developed QD structure, high-performance QD-SESAMs have been successfully achieved, exhibiting a very small saturation intensity of 13.7 MW/cm(2) and a large nonlinear modulation depth of 1.6 %, simultaneously, which enables the construction of a 1550-nm femtosecond mode-locked fiber lasers with excellent long-term working stability. Springer US 2019-12-02 /pmc/articles/PMC6889259/ /pubmed/31792621 http://dx.doi.org/10.1186/s11671-019-3188-3 Text en © The Author(s). 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Jiang, Cheng
Ning, Jiqiang
Li, Xiaohui
Wang, Xu
Zhang, Ziyang
Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications
title Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications
title_full Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications
title_fullStr Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications
title_full_unstemmed Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications
title_short Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications
title_sort development of a 1550-nm inas/gaas quantum dot saturable absorber mirror with a short-period superlattice capping structure towards femtosecond fiber laser applications
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6889259/
https://www.ncbi.nlm.nih.gov/pubmed/31792621
http://dx.doi.org/10.1186/s11671-019-3188-3
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