Cargando…
Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications
Low-dimensional III–V InAs/GaAs quantum dots (QDs) have been successfully applied to semiconductor saturable absorber mirrors (SESAMs) working at a 900–1310-nm wavelength range for ultrafast pulsed laser applications benefitting from their broad bandwidth, wavelength flexibility, and low saturation...
Autores principales: | , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6889259/ https://www.ncbi.nlm.nih.gov/pubmed/31792621 http://dx.doi.org/10.1186/s11671-019-3188-3 |
_version_ | 1783475377343037440 |
---|---|
author | Jiang, Cheng Ning, Jiqiang Li, Xiaohui Wang, Xu Zhang, Ziyang |
author_facet | Jiang, Cheng Ning, Jiqiang Li, Xiaohui Wang, Xu Zhang, Ziyang |
author_sort | Jiang, Cheng |
collection | PubMed |
description | Low-dimensional III–V InAs/GaAs quantum dots (QDs) have been successfully applied to semiconductor saturable absorber mirrors (SESAMs) working at a 900–1310-nm wavelength range for ultrafast pulsed laser applications benefitting from their broad bandwidth, wavelength flexibility, and low saturation fluence. However, it is very challenging to obtain a high-performance QD-SESAM working at the longer wavelength range around 1550 nm due to the huge obstacle to epitaxy growth of the QD structures. In this work, for the first time, it is revealed that, the InAs/GaAs QD system designed for the 1550-nm light emission range, the very weak carrier relaxation process from the capping layers (CLs) to QDs is mainly responsible for the poor emission performance, according to which we have developed a short-period superlattice (In(0.20)Ga(0.80)As/In(0.30)Ga(0.70)As)(5) as the CL for the QDs and has realized ~ 10 times stronger emission at 1550 nm compared with the conventional InGaAs CL. Based on the developed QD structure, high-performance QD-SESAMs have been successfully achieved, exhibiting a very small saturation intensity of 13.7 MW/cm(2) and a large nonlinear modulation depth of 1.6 %, simultaneously, which enables the construction of a 1550-nm femtosecond mode-locked fiber lasers with excellent long-term working stability. |
format | Online Article Text |
id | pubmed-6889259 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Springer US |
record_format | MEDLINE/PubMed |
spelling | pubmed-68892592019-12-17 Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications Jiang, Cheng Ning, Jiqiang Li, Xiaohui Wang, Xu Zhang, Ziyang Nanoscale Res Lett Nano Express Low-dimensional III–V InAs/GaAs quantum dots (QDs) have been successfully applied to semiconductor saturable absorber mirrors (SESAMs) working at a 900–1310-nm wavelength range for ultrafast pulsed laser applications benefitting from their broad bandwidth, wavelength flexibility, and low saturation fluence. However, it is very challenging to obtain a high-performance QD-SESAM working at the longer wavelength range around 1550 nm due to the huge obstacle to epitaxy growth of the QD structures. In this work, for the first time, it is revealed that, the InAs/GaAs QD system designed for the 1550-nm light emission range, the very weak carrier relaxation process from the capping layers (CLs) to QDs is mainly responsible for the poor emission performance, according to which we have developed a short-period superlattice (In(0.20)Ga(0.80)As/In(0.30)Ga(0.70)As)(5) as the CL for the QDs and has realized ~ 10 times stronger emission at 1550 nm compared with the conventional InGaAs CL. Based on the developed QD structure, high-performance QD-SESAMs have been successfully achieved, exhibiting a very small saturation intensity of 13.7 MW/cm(2) and a large nonlinear modulation depth of 1.6 %, simultaneously, which enables the construction of a 1550-nm femtosecond mode-locked fiber lasers with excellent long-term working stability. Springer US 2019-12-02 /pmc/articles/PMC6889259/ /pubmed/31792621 http://dx.doi.org/10.1186/s11671-019-3188-3 Text en © The Author(s). 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. |
spellingShingle | Nano Express Jiang, Cheng Ning, Jiqiang Li, Xiaohui Wang, Xu Zhang, Ziyang Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications |
title | Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications |
title_full | Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications |
title_fullStr | Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications |
title_full_unstemmed | Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications |
title_short | Development of a 1550-nm InAs/GaAs Quantum Dot Saturable Absorber Mirror with a Short-Period Superlattice Capping Structure Towards Femtosecond Fiber Laser Applications |
title_sort | development of a 1550-nm inas/gaas quantum dot saturable absorber mirror with a short-period superlattice capping structure towards femtosecond fiber laser applications |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6889259/ https://www.ncbi.nlm.nih.gov/pubmed/31792621 http://dx.doi.org/10.1186/s11671-019-3188-3 |
work_keys_str_mv | AT jiangcheng developmentofa1550nminasgaasquantumdotsaturableabsorbermirrorwithashortperiodsuperlatticecappingstructuretowardsfemtosecondfiberlaserapplications AT ningjiqiang developmentofa1550nminasgaasquantumdotsaturableabsorbermirrorwithashortperiodsuperlatticecappingstructuretowardsfemtosecondfiberlaserapplications AT lixiaohui developmentofa1550nminasgaasquantumdotsaturableabsorbermirrorwithashortperiodsuperlatticecappingstructuretowardsfemtosecondfiberlaserapplications AT wangxu developmentofa1550nminasgaasquantumdotsaturableabsorbermirrorwithashortperiodsuperlatticecappingstructuretowardsfemtosecondfiberlaserapplications AT zhangziyang developmentofa1550nminasgaasquantumdotsaturableabsorbermirrorwithashortperiodsuperlatticecappingstructuretowardsfemtosecondfiberlaserapplications |