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Enhanced Light-Induced Transverse Thermoelectric Effect in Tilted BiCuSeO Film via the Ultra-thin AuNPs Layer

Significant enhancement of light-induced transverse thermoelectric (LITT) effect in tilted BiCuSeO film has been achieved via introduction of an ultra-thin layer of gold nanoparticles (AuNPs) with the thickness of a few nanometers. In both cases of pulsed and continuous light irradiation, about two...

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Detalles Bibliográficos
Autores principales: Yu, Weiyuan, Yan, Guoying, Xue, Yuli, Zhang, Yuejiao, Wang, Jianglong, Fu, Guangsheng, Wang, Shufang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6895342/
https://www.ncbi.nlm.nih.gov/pubmed/31807939
http://dx.doi.org/10.1186/s11671-019-3190-9
Descripción
Sumario:Significant enhancement of light-induced transverse thermoelectric (LITT) effect in tilted BiCuSeO film has been achieved via introduction of an ultra-thin layer of gold nanoparticles (AuNPs) with the thickness of a few nanometers. In both cases of pulsed and continuous light irradiation, about two times increment in the LITT voltage sensitivity is observed for the BiCuSeO film coated with 4-nm-thick AuNPs layer. This can be ascribed to the increased photo-thermal conversion efficiency in the LITT effect owing to the efficient usage of the incident light of AuNPs layer. Thicker AuNPs layer will suppress the voltage sensitivity increment due to the electrical connectivity effect. This work provides an effective strategy for optimizing the performance of thermal-type optical detectors based on the LITT effect.