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Strain-induced control of a pillar cavity-GaAs single quantum dot photon source

Herein, we present the calculated strain-induced control of single GaAs/AlGaAs quantum dots (QDs) integrated into semiconductor micropillar cavities. We show precise energy control of individual single GaAs QD excitons under multi-modal stress fields of tailored micropillar optomechanical resonators...

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Detalles Bibliográficos
Autores principales: Yeo, Inah, Kim, Doukyun, Han, Il Ki, Song, Jin Dong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6897991/
https://www.ncbi.nlm.nih.gov/pubmed/31811212
http://dx.doi.org/10.1038/s41598-019-55010-3
Descripción
Sumario:Herein, we present the calculated strain-induced control of single GaAs/AlGaAs quantum dots (QDs) integrated into semiconductor micropillar cavities. We show precise energy control of individual single GaAs QD excitons under multi-modal stress fields of tailored micropillar optomechanical resonators. Further, using a three-dimensional envelope-function model, we evaluated the quantum mechanical correction in the QD band structures depending on their geometrical shape asymmetries and, more interestingly, on the practical degree of Al interdiffusion. Our theoretical calculations provide the practical quantum error margins, obtained by evaluating Al-interdiffused QDs that were engineered through a front-edge droplet epitaxy technique, for tuning engineered QD single-photon sources, facilitating a scalable on-chip integration of QD entangled photons.