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Near ideal synaptic functionalities in Li ion synaptic transistor using Li(3)PO(x)Se(x) electrolyte with high ionic conductivity

All solid-state lithium-ion transistors are considered as promising synaptic devices for building artificial neural networks for neuromorphic computing. However, the slow ionic conduction in existing electrolytes hinders the performance of lithium-ion-based synaptic transistors. In this study, we sy...

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Detalles Bibliográficos
Autores principales: Nikam, Revannath Dnyandeo, Kwak, Myonghoon, Lee, Jongwon, Rajput, Krishn Gopal, Banerjee, Writam, Hwang, Hyunsang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6906484/
https://www.ncbi.nlm.nih.gov/pubmed/31827190
http://dx.doi.org/10.1038/s41598-019-55310-8
Descripción
Sumario:All solid-state lithium-ion transistors are considered as promising synaptic devices for building artificial neural networks for neuromorphic computing. However, the slow ionic conduction in existing electrolytes hinders the performance of lithium-ion-based synaptic transistors. In this study, we systematically explore the influence of ionic conductivity of electrolytes on the synaptic performance of ionic transistors. Isovalent chalcogenide substitution such as Se in Li(3)PO(4) significantly reduces the activation energy for Li ion migration from 0.35 to 0.253 eV, leading to a fast ionic conduction. This high ionic conductivity allows linear conductance switching in the LiCoO(2) channel with several discrete nonvolatile states and good retention for both potentiation and depression steps. Consequently, optimized devices demonstrate the smallest nonlinearity ratio of 0.12 and high on/off ratio of 19. However, Li(3)PO(4) electrolyte (with lower ionic conductivity) shows asymmetric and nonlinear weight-update characteristics. Our findings show that the facilitation of Li ionic conduction in solid-state electrolyte suggests potential application in artificial synapse device development.