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Highly flexible and stable resistive switching devices based on WS(2) nanosheets:poly(methylmethacrylate) nanocomposites
This paper reports data for the electrical characteristics and the operating mechanisms of flexible resistive switching devices based on WS(2) nanosheets (NSs) dispersed in a poly(methyl methacrylate) (PMMA) layer. The ON/OFF ratio of the memristive device based on an Al/WS(2) NSs:PMMA/indium tin ox...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6917699/ https://www.ncbi.nlm.nih.gov/pubmed/31848387 http://dx.doi.org/10.1038/s41598-019-55637-2 |
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author | Lee, Jeong Heon Wu, Chaoxing Sung, Sihyun An, Haoqun Kim, Tae Whan |
author_facet | Lee, Jeong Heon Wu, Chaoxing Sung, Sihyun An, Haoqun Kim, Tae Whan |
author_sort | Lee, Jeong Heon |
collection | PubMed |
description | This paper reports data for the electrical characteristics and the operating mechanisms of flexible resistive switching devices based on WS(2) nanosheets (NSs) dispersed in a poly(methyl methacrylate) (PMMA) layer. The ON/OFF ratio of the memristive device based on an Al/WS(2) NSs:PMMA/indium tin oxides (ITO) structure was approximately 5.9 × 10(4). The memristive device based on the WS(2) NSs also exhibited the bipolar switching characteristics with low power consumption and great performance in the bent state with radii of the curvatures of 20 and 10 mm. Especially, the results obtained after bending the device were similar to those observed before bending. The device showed nearly the same ON/OFF ratio for a retention time of 1 × 10(4) sec, and the number of endurance cycles was greater than 1 × 10(2). The set voltage and the reset voltage probability distributions for the setting and the resetting processes indicated bipolar switching characteristics. The operating and the carrier transport mechanisms of the Al/WS(2) NSs:PMMA/ITO device could be explained based on the current-voltage results with the aid of an energy band diagram. |
format | Online Article Text |
id | pubmed-6917699 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-69176992019-12-18 Highly flexible and stable resistive switching devices based on WS(2) nanosheets:poly(methylmethacrylate) nanocomposites Lee, Jeong Heon Wu, Chaoxing Sung, Sihyun An, Haoqun Kim, Tae Whan Sci Rep Article This paper reports data for the electrical characteristics and the operating mechanisms of flexible resistive switching devices based on WS(2) nanosheets (NSs) dispersed in a poly(methyl methacrylate) (PMMA) layer. The ON/OFF ratio of the memristive device based on an Al/WS(2) NSs:PMMA/indium tin oxides (ITO) structure was approximately 5.9 × 10(4). The memristive device based on the WS(2) NSs also exhibited the bipolar switching characteristics with low power consumption and great performance in the bent state with radii of the curvatures of 20 and 10 mm. Especially, the results obtained after bending the device were similar to those observed before bending. The device showed nearly the same ON/OFF ratio for a retention time of 1 × 10(4) sec, and the number of endurance cycles was greater than 1 × 10(2). The set voltage and the reset voltage probability distributions for the setting and the resetting processes indicated bipolar switching characteristics. The operating and the carrier transport mechanisms of the Al/WS(2) NSs:PMMA/ITO device could be explained based on the current-voltage results with the aid of an energy band diagram. Nature Publishing Group UK 2019-12-17 /pmc/articles/PMC6917699/ /pubmed/31848387 http://dx.doi.org/10.1038/s41598-019-55637-2 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Lee, Jeong Heon Wu, Chaoxing Sung, Sihyun An, Haoqun Kim, Tae Whan Highly flexible and stable resistive switching devices based on WS(2) nanosheets:poly(methylmethacrylate) nanocomposites |
title | Highly flexible and stable resistive switching devices based on WS(2) nanosheets:poly(methylmethacrylate) nanocomposites |
title_full | Highly flexible and stable resistive switching devices based on WS(2) nanosheets:poly(methylmethacrylate) nanocomposites |
title_fullStr | Highly flexible and stable resistive switching devices based on WS(2) nanosheets:poly(methylmethacrylate) nanocomposites |
title_full_unstemmed | Highly flexible and stable resistive switching devices based on WS(2) nanosheets:poly(methylmethacrylate) nanocomposites |
title_short | Highly flexible and stable resistive switching devices based on WS(2) nanosheets:poly(methylmethacrylate) nanocomposites |
title_sort | highly flexible and stable resistive switching devices based on ws(2) nanosheets:poly(methylmethacrylate) nanocomposites |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6917699/ https://www.ncbi.nlm.nih.gov/pubmed/31848387 http://dx.doi.org/10.1038/s41598-019-55637-2 |
work_keys_str_mv | AT leejeongheon highlyflexibleandstableresistiveswitchingdevicesbasedonws2nanosheetspolymethylmethacrylatenanocomposites AT wuchaoxing highlyflexibleandstableresistiveswitchingdevicesbasedonws2nanosheetspolymethylmethacrylatenanocomposites AT sungsihyun highlyflexibleandstableresistiveswitchingdevicesbasedonws2nanosheetspolymethylmethacrylatenanocomposites AT anhaoqun highlyflexibleandstableresistiveswitchingdevicesbasedonws2nanosheetspolymethylmethacrylatenanocomposites AT kimtaewhan highlyflexibleandstableresistiveswitchingdevicesbasedonws2nanosheetspolymethylmethacrylatenanocomposites |