Tuning of ionic mobility to improve the resistive switching behavior of Zn-doped CeO(2)

Correlation between the resistive switching characteristics of Au/Zn-doped CeO(2)/Au devices and ionic mobility of CeO(2) altered by the dopant concentration were explored. It was found that the ionic mobility of CeO(2) has a profound effect on the operating voltages of the devices. The magnitude of operating voltage was observed to decrease when the doping concentration of Zn was increased up to 14%. After further increasing the doping level to 24%, the device hardly exhibits any resistive switching. At a low doping concentration, only isolated V(o) existed in the CeO(2) lattice. At an intermediate doping concentration, the association between dopant and V(o) formed (Zn, V(o))(×) defect clusters. Low number density of these defect clusters initially favored the formation of V(o) filament and led to a reduction in operating voltage. As the size and number density of (Zn, V(o))(×) defect clusters increased at a higher doping concentration, the ionic conductivity was limited with the trapping of isolated V(o) by these defect clusters, which resulted in the diminishing of resistive switching. This research work provides a strategy for tuning the mobility of V(o) to modulate resistive switching characteristics for non-volatile memory applications.