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Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates

[Image: see text] Dual-gate thin-film transistors (DGTFTs) have attracted increasing attention in the past few years because of threshold voltage modulation and device logic functionality. Here, solution-processed chitosan-based proton conductors are used as the gate dielectric. The threshold voltag...

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Detalles Bibliográficos
Autores principales: Dou, Wei, Tan, Yuanyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6921608/
https://www.ncbi.nlm.nih.gov/pubmed/31867536
http://dx.doi.org/10.1021/acsomega.9b03118
Descripción
Sumario:[Image: see text] Dual-gate thin-film transistors (DGTFTs) have attracted increasing attention in the past few years because of threshold voltage modulation and device logic functionality. Here, solution-processed chitosan-based proton conductors are used as the gate dielectric. The threshold voltage shift depends on the ratio of the capacitances of the two gate dielectrics. The second interesting application of DGTFTs is logic functionality. This device demonstrates AND logic function controlled by applying either 0 or −1 V to each of the gate electrodes. When both gates were simultaneously applied to be 0 V, the current flows (ON). Otherwise, the current is blocked (OFF). In order to provide a comprehensive overview of these paper devices, the planarization of paper surface and switching stability of such DGTFTs are all discussed.