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Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates

[Image: see text] Dual-gate thin-film transistors (DGTFTs) have attracted increasing attention in the past few years because of threshold voltage modulation and device logic functionality. Here, solution-processed chitosan-based proton conductors are used as the gate dielectric. The threshold voltag...

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Detalles Bibliográficos
Autores principales: Dou, Wei, Tan, Yuanyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6921608/
https://www.ncbi.nlm.nih.gov/pubmed/31867536
http://dx.doi.org/10.1021/acsomega.9b03118
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author Dou, Wei
Tan, Yuanyuan
author_facet Dou, Wei
Tan, Yuanyuan
author_sort Dou, Wei
collection PubMed
description [Image: see text] Dual-gate thin-film transistors (DGTFTs) have attracted increasing attention in the past few years because of threshold voltage modulation and device logic functionality. Here, solution-processed chitosan-based proton conductors are used as the gate dielectric. The threshold voltage shift depends on the ratio of the capacitances of the two gate dielectrics. The second interesting application of DGTFTs is logic functionality. This device demonstrates AND logic function controlled by applying either 0 or −1 V to each of the gate electrodes. When both gates were simultaneously applied to be 0 V, the current flows (ON). Otherwise, the current is blocked (OFF). In order to provide a comprehensive overview of these paper devices, the planarization of paper surface and switching stability of such DGTFTs are all discussed.
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spelling pubmed-69216082019-12-20 Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates Dou, Wei Tan, Yuanyuan ACS Omega [Image: see text] Dual-gate thin-film transistors (DGTFTs) have attracted increasing attention in the past few years because of threshold voltage modulation and device logic functionality. Here, solution-processed chitosan-based proton conductors are used as the gate dielectric. The threshold voltage shift depends on the ratio of the capacitances of the two gate dielectrics. The second interesting application of DGTFTs is logic functionality. This device demonstrates AND logic function controlled by applying either 0 or −1 V to each of the gate electrodes. When both gates were simultaneously applied to be 0 V, the current flows (ON). Otherwise, the current is blocked (OFF). In order to provide a comprehensive overview of these paper devices, the planarization of paper surface and switching stability of such DGTFTs are all discussed. American Chemical Society 2019-12-06 /pmc/articles/PMC6921608/ /pubmed/31867536 http://dx.doi.org/10.1021/acsomega.9b03118 Text en Copyright © 2019 American Chemical Society This is an open access article published under a Creative Commons Non-Commercial No Derivative Works (CC-BY-NC-ND) Attribution License (http://pubs.acs.org/page/policy/authorchoice_ccbyncnd_termsofuse.html) , which permits copying and redistribution of the article, and creation of adaptations, all for non-commercial purposes.
spellingShingle Dou, Wei
Tan, Yuanyuan
Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates
title Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates
title_full Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates
title_fullStr Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates
title_full_unstemmed Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates
title_short Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates
title_sort junctionless dual in-plane-gate thin-film transistors with and logic function on paper substrates
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6921608/
https://www.ncbi.nlm.nih.gov/pubmed/31867536
http://dx.doi.org/10.1021/acsomega.9b03118
work_keys_str_mv AT douwei junctionlessdualinplanegatethinfilmtransistorswithandlogicfunctiononpapersubstrates
AT tanyuanyuan junctionlessdualinplanegatethinfilmtransistorswithandlogicfunctiononpapersubstrates