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Quantum spin-valley Hall effect in AB-stacked bilayer silicene

Our density functional theory calculations show that while AB-stacked bilayer silicene has a non-quantized spin-valley Chern number, there exist backscattering-free gapless edge states within the bulk gap, leading to a quantum spin-valley Hall effect. Using a tight-binding model for a honeycomb bila...

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Detalles Bibliográficos
Autores principales:	Lee, Kyu Won, Lee, Cheol Eui
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6923400/ https://www.ncbi.nlm.nih.gov/pubmed/31857647 http://dx.doi.org/10.1038/s41598-019-55927-9

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