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Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots
With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investigate single-electron tunneling in hard-wall InAs/I...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6925118/ https://www.ncbi.nlm.nih.gov/pubmed/31863018 http://dx.doi.org/10.1038/s41598-019-56053-2 |
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author | Cornia, Samuele Rossella, Francesco Demontis, Valeria Zannier, Valentina Beltram, Fabio Sorba, Lucia Affronte, Marco Ghirri, Alberto |
author_facet | Cornia, Samuele Rossella, Francesco Demontis, Valeria Zannier, Valentina Beltram, Fabio Sorba, Lucia Affronte, Marco Ghirri, Alberto |
author_sort | Cornia, Samuele |
collection | PubMed |
description | With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investigate single-electron tunneling in hard-wall InAs/InP nanowires in the presence of an off-resonant microwave drive. Our heterostructured nanowires include InAs quantum dots (QDs) and exhibit different tunnel-current regimes. In particular, for source-drain bias up to few mV Coulomb diamonds spread with increasing contrast as a function of microwave power and present multiple current polarity reversals. This behavior can be modelled in terms of voltage fluctuations induced by the microwave field and presents features that depend on the interplay of the discrete energy levels that contribute to the tunneling process. |
format | Online Article Text |
id | pubmed-6925118 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-69251182019-12-23 Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots Cornia, Samuele Rossella, Francesco Demontis, Valeria Zannier, Valentina Beltram, Fabio Sorba, Lucia Affronte, Marco Ghirri, Alberto Sci Rep Article With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investigate single-electron tunneling in hard-wall InAs/InP nanowires in the presence of an off-resonant microwave drive. Our heterostructured nanowires include InAs quantum dots (QDs) and exhibit different tunnel-current regimes. In particular, for source-drain bias up to few mV Coulomb diamonds spread with increasing contrast as a function of microwave power and present multiple current polarity reversals. This behavior can be modelled in terms of voltage fluctuations induced by the microwave field and presents features that depend on the interplay of the discrete energy levels that contribute to the tunneling process. Nature Publishing Group UK 2019-12-20 /pmc/articles/PMC6925118/ /pubmed/31863018 http://dx.doi.org/10.1038/s41598-019-56053-2 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Cornia, Samuele Rossella, Francesco Demontis, Valeria Zannier, Valentina Beltram, Fabio Sorba, Lucia Affronte, Marco Ghirri, Alberto Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots |
title | Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots |
title_full | Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots |
title_fullStr | Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots |
title_full_unstemmed | Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots |
title_short | Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots |
title_sort | microwave-assisted tunneling in hard-wall inas/inp nanowire quantum dots |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6925118/ https://www.ncbi.nlm.nih.gov/pubmed/31863018 http://dx.doi.org/10.1038/s41598-019-56053-2 |
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