The Growth of Ga(2)O(3) Nanowires on Silicon for Ultraviolet Photodetector

We investigated the effect of silver catalysts to enhance the growth of Ga(2)O(3) nanowires. The growth of Ga(2)O(3) nanowires on a P(+)-Si (100) substrate was demonstrated by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of a thin silver film that serves as a catalyst layer. We present the results of morphological, compositional, and electrical characterization of the Ga(2)O(3) nanowires, including the measurements on photoconductance and transient time. Our results show that highly oriented, dense and long Ga(2)O(3) nanowires can be grown directly on the surface of silicon. The Ga(2)O(3) nanowires, with their inherent n-type characteristics formed a pn heterojunction when grown on silicon. The heterojunction showed rectifying characteristics and excellent UV photoresponse.