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Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition
We have characterized highly conductive Si-doped GaN films with a high electron mobility of 112 cm(2)V(−1)s(−1) at an electron concentration of 2.9 × 10(20) cm(−3), prepared using pulsed sputtering deposition (PSD). With an increase in the doping concentration, the absorption edge was found to shift...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6934540/ https://www.ncbi.nlm.nih.gov/pubmed/31882664 http://dx.doi.org/10.1038/s41598-019-56306-0 |