Study on In-Doped CdMgTe Crystals Grown by a Modified Vertical Bridgman Method Using the ACRT Technique

Cadmium–magnesium–telluride (CdMgTe) crystal was regarded as a potential semiconductor material. In this paper, an indium-doped Cd(0.95)Mg(0.05)Te ingot with 30 mm diameter and 120 mm length grown by a modified Bridgman method with excess Te condition was developed for room temperature gamma-ray det...

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Detalles Bibliográficos
Autores principales: Yu, Pengfei, Jiang, Biru, Chen, Yongren, Zheng, Jiahong, Luan, Lijun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6947041/
https://www.ncbi.nlm.nih.gov/pubmed/31861186
http://dx.doi.org/10.3390/ma12244236

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6947041/
https://www.ncbi.nlm.nih.gov/pubmed/31861186
http://dx.doi.org/10.3390/ma12244236

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