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Study on In-Doped CdMgTe Crystals Grown by a Modified Vertical Bridgman Method Using the ACRT Technique
Cadmium–magnesium–telluride (CdMgTe) crystal was regarded as a potential semiconductor material. In this paper, an indium-doped Cd(0.95)Mg(0.05)Te ingot with 30 mm diameter and 120 mm length grown by a modified Bridgman method with excess Te condition was developed for room temperature gamma-ray det...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6947041/ https://www.ncbi.nlm.nih.gov/pubmed/31861186 http://dx.doi.org/10.3390/ma12244236 |