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Functionalized rGO Interlayers Improve the Fill Factor and Current Density in PbS QDs-Based Solar Cells

Graphene-quantum dot nanocomposites attract significant attention for novel optoelectronic devices, such as ultrafast photodetectors and third-generation solar cells. Combining the remarkable optical properties of quantum dots (QDs) with the exceptional electrical properties of graphene derivatives...

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Detalles Bibliográficos
Autores principales: Babaev, Anton A., Parfenov, Peter S., Onishchuk, Dmitry A., Dubavik, Aliaksei, Cherevkov, Sergei A., Rybin, Andrei V., Baranov, Mikhail A., Baranov, Alexander V., Litvin, Aleksandr P., Fedorov, Anatoly V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6947317/
https://www.ncbi.nlm.nih.gov/pubmed/31888184
http://dx.doi.org/10.3390/ma12244221
Descripción
Sumario:Graphene-quantum dot nanocomposites attract significant attention for novel optoelectronic devices, such as ultrafast photodetectors and third-generation solar cells. Combining the remarkable optical properties of quantum dots (QDs) with the exceptional electrical properties of graphene derivatives opens a vast perspective for further growth in solar cell efficiency. Here, we applied (3-mercaptopropyl) trimethoxysilane functionalized reduced graphene oxide (f-rGO) to improve the QDs-based solar cell active layer. The different strategies of f-rGO embedding are explored. When f-rGO interlayers are inserted between PbS QD layers, the solar cells demonstrate a higher current density and a better fill factor. A combined study of the morphological and electrical parameters of the solar cells shows that the improved efficiency is associated with better layer homogeneity, lower trap-state densities, higher charge carrier concentrations, and the blocking of the minor charge carriers.