High-Temperature Dielectric Relaxation Behaviors in Mn(3)O(4) Polycrystals

High temperature dielectric relaxation behaviors of single phase Mn(3)O(4) polycrystalline ceramics prepared by spark plasma sintering technology have been studied. Two dielectric relaxations were observed in the temperature range of 200 K–330 K and in the frequency range of 20 Hz–10 MHz. The lower temperature relaxation is a type of thermally activated relaxation process, which mainly results from the hopping of oxygen vacancies based on the activation energy analysis. There is another abnormal dielectric phenomenon that is different from the conventional thermally activated behavior and is related to a positive temperature coefficient of resistance (PTCR) effect in the temperature region. In line with the impedance analyses, we distinguished the contributions of grains and grain boundaries. A comparison of the frequency-dependent spectra of the imaginary impedance with imaginary electric modulus suggests that both the long range conduction and the localized conduction are responsible for the dielectric relaxations in the Mn(3)O(4) polycrystalline samples.