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Study of Edge and Screw Dislocation Density in GaN/Al(2)O(3) Heterostructure

This study assesses the characteristics (edge and screw dislocation density) of a commercially available GaN/AlN/Al(2)O(3) wafer. The heterostructure was evaluated by means of high-resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HR-TEM), and Doppler-Broadenin...

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Detalles Bibliográficos
Autores principales:	Ene, Vladimir Lucian, Dinescu, Doru, Zai, Iulia, Djourelov, Nikolay, Vasile, Bogdan Stefan, Serban, Andreea Bianca, Leca, Victor, Andronescu, Ecaterina
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6947610/ https://www.ncbi.nlm.nih.gov/pubmed/31847334 http://dx.doi.org/10.3390/ma12244205

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