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Improving Output Power of InGaN Laser Diode Using Asymmetric In(0.15)Ga(0.85)N/In(0.02)Ga(0.98)N Multiple Quantum Wells

Herein, the optical field distribution and electrical property improvements of the InGaN laser diode with an emission wavelength around 416 nm are theoretically investigated by adjusting the relative thickness of the first or last barrier layer in the three In(0.15)Ga(0.85)N/In(0.02)Ga(0.98)N quantu...

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Detalles Bibliográficos
Autores principales:	Wang, Wenjie, Xie, Wuze, Deng, Zejia, Liao, Mingle
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6952886/ https://www.ncbi.nlm.nih.gov/pubmed/31847087 http://dx.doi.org/10.3390/mi10120875

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