Cargando…

InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation

This paper reports an InAs/InAsSb strained-layer superlattice (SLS) mid-wavelength infrared detector and a focal plane array particularly suited for high-temperature operation. Utilizing the nBn architecture, the detector structure was grown by molecular beam epitaxy and consists of a 5.5 µm thick n...

Descripción completa

Detalles Bibliográficos
Autores principales:	Ariyawansa, Gamini, Duran, Joshua, Reyner, Charles, Scheihing, John
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6952957/ https://www.ncbi.nlm.nih.gov/pubmed/31766748 http://dx.doi.org/10.3390/mi10120806

Ejemplares similares

InAs/InAsSb Strain-Balanced Superlattices for Longwave Infrared Detectors
por: Manyk, Tetiana, et al.
Publicado: (2019)

InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors
por: Ting, David Z., et al.
Publicado: (2020)

Dark current reduction in microjunction-based double electron barrier type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors
por: Chevallier, Romain, et al.
Publicado: (2017)

Determination of the Strain Influence on the InAs/InAsSb Type-II Superlattice Effective Masses
por: Manyk, Tetiana, et al.
Publicado: (2022)

Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
por: Chen, Jianxin, et al.
Publicado: (2011)

Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
por: Li, Jiakai, et al.
Publicado: (2021)

High-Performance Anodic Vulcanization-Pretreated Gated P(+)–π–M–N(+) InAs/GaSb Superlattice Long-Wavelength Infrared Detector
por: Sun, Ju, et al.
Publicado: (2021)

InAsSb-Based Infrared Photodetectors: Thirty Years Later On
por: Rogalski, Antoni, et al.
Publicado: (2020)

Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices
por: Jiang, Yuxuan, et al.
Publicado: (2022)

Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain
por: Kim, Honggyu, et al.
Publicado: (2018)

Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs(1−x)Sb(x)/AlAs(1−x)Sb(x) type–II superlattices
por: Haddadi, Abbas, et al.
Publicado: (2017)

Thermoelectrically-Cooled InAs/GaSb Type-II Superlattice Detectors as an Alternative to HgCdTe in a Real-Time Mid-Infrared Backscattering Spectroscopy System
por: Müller, Raphael, et al.
Publicado: (2020)

In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces
por: Wu, Shujie, et al.
Publicado: (2013)

High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices
por: Hoang, Anh Minh, et al.
Publicado: (2016)

The Role of Noise in Specific Detectivity of InAs/GaSb Superlattice MWIR Bariodes
por: Czuba, Krzysztof, et al.
Publicado: (2021)

Semiconductor quantum wells and superlattices for long-wavelength infrared detectors
por: Manasreh, M O
Publicado: (1993)

Design and modeling of high-performance mid-wave infrared InAsSb-based nBn photodetector using barrier band engineering approaches
por: Shaveisi, Maryam, et al.
Publicado: (2023)

Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform
por: Kwan, D. C. M., et al.
Publicado: (2022)

Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light
por: Yao, Xiaomei, et al.
Publicado: (2021)

Photoluminescence Spectroscopy of the InAsSb-Based p-i-n Heterostructure
por: Smołka, Tristan, et al.
Publicado: (2022)

Observation of linear and quadratic magnetic field-dependence of magneto-photocurrents in InAs/GaSb superlattice
por: Li, Yuan, et al.
Publicado: (2014)

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices
por: Alshahrani, Dhafer, et al.
Publicado: (2023)

Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy
por: Marchewka, Michał, et al.
Publicado: (2023)

Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As(x)Sb(1-x )interfaces
por: Li, Li-Gong, et al.
Publicado: (2012)

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer
por: Utrilla, Antonio D, et al.
Publicado: (2014)

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
por: Benyahia, D., et al.
Publicado: (2018)

Phonon Transport in GaAs and InAs Twinning Superlattices
por: López-Güell, Kim, et al.
Publicado: (2022)

A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping
por: Sankowska, Iwona, et al.
Publicado: (2021)

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires
por: Luo, Ning, et al.
Publicado: (2016)

Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers
por: Złotnik, Sebastian, et al.
Publicado: (2021)

Chaotic light at mid-infrared wavelength
por: Jumpertz, Louise, et al.
Publicado: (2016)

Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers
por: Motyka, Marcin, et al.
Publicado: (2015)

Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range
por: Dyksik, Mateusz, et al.
Publicado: (2015)

Atomic Layering, Intermixing and Switching Mechanism in Ge-Sb-Te based Chalcogenide Superlattices
por: Yu, Xiaoming, et al.
Publicado: (2016)

Scanning Tunneling Spectroscopy on InAs–GaSb Esaki Diode Nanowire Devices during Operation
por: Persson, Olof, et al.
Publicado: (2015)

Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays
por: Wook Shin, Hyun, et al.
Publicado: (2015)

Self-Catalyzed InSb/InAs Quantum Dot Nanowires
por: Arif, Omer, et al.
Publicado: (2021)

High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire
por: Kuo, Cheng-Hsiang, et al.
Publicado: (2013)

Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
por: Sobolev, Mikhail, et al.
Publicado: (2012)

Atomic Scale Surface Structure and Morphology of InAs Nanowire Crystal Superlattices: The Effect of Epitaxial Overgrowth
por: Knutsson, J. V., et al.
Publicado: (2015)

Cannot write session to /tmp/vufind_sessions/sess_bbge59vnkuj9k1psrs4v3itsje