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Investigation of the Young’s Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates

The stress state is a crucial parameter for the design of innovative microelectromechanical systems based on silicon carbide (SiC) material. Hence, mechanical properties of such structures highly depend on the fabrication process. Despite significant progresses in thin-film growth and fabrication pr...

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Detalles Bibliográficos
Autores principales:	Ben Messaoud, Jaweb, Michaud, Jean-François, Certon, Dominique, Camarda, Massimo, Piluso, Nicolò, Colin, Laurent, Barcella, Flavien, Alquier, Daniel
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6953090/ https://www.ncbi.nlm.nih.gov/pubmed/31766525 http://dx.doi.org/10.3390/mi10120801

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