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Theoretical study of phase stability, crystal and electronic structure of MeMgN(2) (Me = Ti, Zr, Hf) compounds

Scandium nitride has recently gained interest as a prospective compound for thermoelectric applications due to its high Seebeck coefficient. However, ScN also has a relatively high thermal conductivity, which limits its thermoelectric efficiency and figure of merit (zT). These properties motivate a...

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Detalles Bibliográficos
Autores principales: Gharavi, M. A., Armiento, R., Alling, B., Eklund, P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6956942/
https://www.ncbi.nlm.nih.gov/pubmed/31997832
http://dx.doi.org/10.1007/s10853-017-1849-0
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author Gharavi, M. A.
Armiento, R.
Alling, B.
Eklund, P.
author_facet Gharavi, M. A.
Armiento, R.
Alling, B.
Eklund, P.
author_sort Gharavi, M. A.
collection PubMed
description Scandium nitride has recently gained interest as a prospective compound for thermoelectric applications due to its high Seebeck coefficient. However, ScN also has a relatively high thermal conductivity, which limits its thermoelectric efficiency and figure of merit (zT). These properties motivate a search for other semiconductor materials that share the electronic structure features of ScN, but which have a lower thermal conductivity. Thus, the focus of our study is to predict the existence and stability of such materials among inherently layered equivalent ternaries that incorporate heavier atoms for enhanced phonon scattering and to calculate their thermoelectric properties. Using density functional theory calculations, the phase stability of TiMgN(2), ZrMgN(2) and HfMgN(2) compounds has been calculated. From the computationally predicted phase diagrams for these materials, we conclude that all three compounds are stable in these stoichiometries. The stable compounds may have one of two competing crystal structures: a monoclinic structure (LiUN(2) prototype) or a trigonal superstructure (NaCrS(2) prototype; R[Formula: see text] mH). The band structure for the two competing structures for each ternary is also calculated and predicts semiconducting behavior for all three compounds in the NaCrS(2) crystal structure with an indirect band gap and semiconducting behavior for ZrMgN(2) and HfMgN(2) in the monoclinic crystal structure with a direct band gap. Seebeck coefficient and power factors are also predicted, showing that all three compounds in both the NaCrS(2) and the LiUN(2) structures have large Seebeck coefficients. The predicted stability of these compounds suggests that they can be synthesized by, e.g., physical vapor deposition.
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spelling pubmed-69569422020-01-27 Theoretical study of phase stability, crystal and electronic structure of MeMgN(2) (Me = Ti, Zr, Hf) compounds Gharavi, M. A. Armiento, R. Alling, B. Eklund, P. J Mater Sci Electronic Materials Scandium nitride has recently gained interest as a prospective compound for thermoelectric applications due to its high Seebeck coefficient. However, ScN also has a relatively high thermal conductivity, which limits its thermoelectric efficiency and figure of merit (zT). These properties motivate a search for other semiconductor materials that share the electronic structure features of ScN, but which have a lower thermal conductivity. Thus, the focus of our study is to predict the existence and stability of such materials among inherently layered equivalent ternaries that incorporate heavier atoms for enhanced phonon scattering and to calculate their thermoelectric properties. Using density functional theory calculations, the phase stability of TiMgN(2), ZrMgN(2) and HfMgN(2) compounds has been calculated. From the computationally predicted phase diagrams for these materials, we conclude that all three compounds are stable in these stoichiometries. The stable compounds may have one of two competing crystal structures: a monoclinic structure (LiUN(2) prototype) or a trigonal superstructure (NaCrS(2) prototype; R[Formula: see text] mH). The band structure for the two competing structures for each ternary is also calculated and predicts semiconducting behavior for all three compounds in the NaCrS(2) crystal structure with an indirect band gap and semiconducting behavior for ZrMgN(2) and HfMgN(2) in the monoclinic crystal structure with a direct band gap. Seebeck coefficient and power factors are also predicted, showing that all three compounds in both the NaCrS(2) and the LiUN(2) structures have large Seebeck coefficients. The predicted stability of these compounds suggests that they can be synthesized by, e.g., physical vapor deposition. Springer US 2017-11-30 2018 /pmc/articles/PMC6956942/ /pubmed/31997832 http://dx.doi.org/10.1007/s10853-017-1849-0 Text en © The Author(s) 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Electronic Materials
Gharavi, M. A.
Armiento, R.
Alling, B.
Eklund, P.
Theoretical study of phase stability, crystal and electronic structure of MeMgN(2) (Me = Ti, Zr, Hf) compounds
title Theoretical study of phase stability, crystal and electronic structure of MeMgN(2) (Me = Ti, Zr, Hf) compounds
title_full Theoretical study of phase stability, crystal and electronic structure of MeMgN(2) (Me = Ti, Zr, Hf) compounds
title_fullStr Theoretical study of phase stability, crystal and electronic structure of MeMgN(2) (Me = Ti, Zr, Hf) compounds
title_full_unstemmed Theoretical study of phase stability, crystal and electronic structure of MeMgN(2) (Me = Ti, Zr, Hf) compounds
title_short Theoretical study of phase stability, crystal and electronic structure of MeMgN(2) (Me = Ti, Zr, Hf) compounds
title_sort theoretical study of phase stability, crystal and electronic structure of memgn(2) (me = ti, zr, hf) compounds
topic Electronic Materials
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6956942/
https://www.ncbi.nlm.nih.gov/pubmed/31997832
http://dx.doi.org/10.1007/s10853-017-1849-0
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