A 120-ke(−) Full-Well Capacity 160-µV/e(−) Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor †

In this paper, a prototype complementary metal-oxide-semiconductor (CMOS) image sensor with a 2.8-μm backside-illuminated (BSI) pixel with a lateral overflow integration capacitor (LOFIC) architecture is presented. The pixel was capable of a high conversion gain readout with 160 μV/e(−) for low ligh...

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Detalles Bibliográficos
Autores principales: Takayanagi, Isao, Miyauchi, Ken, Okura, Shunsuke, Mori, Kazuya, Nakamura, Junichi, Sugawa, Shigetoshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6960954/
https://www.ncbi.nlm.nih.gov/pubmed/31861104
http://dx.doi.org/10.3390/s19245572

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6960954/
https://www.ncbi.nlm.nih.gov/pubmed/31861104
http://dx.doi.org/10.3390/s19245572

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