Leakage Current Non-Uniformity and Random Telegraph Signals in CMOS Image Sensor Floating Diffusions Used for In-Pixel Charge Storage

The leakage current non-uniformity, as well as the leakage current random and discrete fluctuations sources, are investigated in pinned photodiode CMOS image sensor floating diffusions. Different bias configurations are studied to evaluate the electric field impacts on the FD leakage current. This s...

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Detalles Bibliográficos
Autores principales: Le Roch, Alexandre, Goiffon, Vincent, Marcelot, Olivier, Paillet, Philippe, Pace, Federico, Belloir, Jean-Marc, Magnan, Pierre, Virmontois, Cédric
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6961015/
https://www.ncbi.nlm.nih.gov/pubmed/31888151
http://dx.doi.org/10.3390/s19245550

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6961015/
https://www.ncbi.nlm.nih.gov/pubmed/31888151
http://dx.doi.org/10.3390/s19245550

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