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Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays
The brain performs intelligent tasks with extremely low energy consumption. This work takes its inspiration from two strategies used by the brain to achieve this energy efficiency: the absence of separation between computing and memory functions and reliance on low-precision computation. The emergen...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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Frontiers Media S.A.
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6962102/ https://www.ncbi.nlm.nih.gov/pubmed/31998059 http://dx.doi.org/10.3389/fnins.2019.01383 |
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author | Hirtzlin, Tifenn Bocquet, Marc Penkovsky, Bogdan Klein, Jacques-Olivier Nowak, Etienne Vianello, Elisa Portal, Jean-Michel Querlioz, Damien |
author_facet | Hirtzlin, Tifenn Bocquet, Marc Penkovsky, Bogdan Klein, Jacques-Olivier Nowak, Etienne Vianello, Elisa Portal, Jean-Michel Querlioz, Damien |
author_sort | Hirtzlin, Tifenn |
collection | PubMed |
description | The brain performs intelligent tasks with extremely low energy consumption. This work takes its inspiration from two strategies used by the brain to achieve this energy efficiency: the absence of separation between computing and memory functions and reliance on low-precision computation. The emergence of resistive memory technologies indeed provides an opportunity to tightly co-integrate logic and memory in hardware. In parallel, the recently proposed concept of a Binarized Neural Network, where multiplications are replaced by exclusive NOR (XNOR) logic gates, offers a way to implement artificial intelligence using very low precision computation. In this work, we therefore propose a strategy for implementing low-energy Binarized Neural Networks that employs brain-inspired concepts while retaining the energy benefits of digital electronics. We design, fabricate, and test a memory array, including periphery and sensing circuits, that is optimized for this in-memory computing scheme. Our circuit employs hafnium oxide resistive memory integrated in the back end of line of a 130-nm CMOS process, in a two-transistor, two-resistor cell, which allows the exclusive NOR operations of the neural network to be performed directly within the sense amplifiers. We show, based on extensive electrical measurements, that our design allows a reduction in the number of bit errors on the synaptic weights without the use of formal error-correcting codes. We design a whole system using this memory array. We show on standard machine learning tasks (MNIST, CIFAR-10, ImageNet, and an ECG task) that the system has inherent resilience to bit errors. We evidence that its energy consumption is attractive compared to more standard approaches and that it can use memory devices in regimes where they exhibit particularly low programming energy and high endurance. We conclude the work by discussing how it associates biologically plausible ideas with more traditional digital electronics concepts. |
format | Online Article Text |
id | pubmed-6962102 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Frontiers Media S.A. |
record_format | MEDLINE/PubMed |
spelling | pubmed-69621022020-01-29 Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays Hirtzlin, Tifenn Bocquet, Marc Penkovsky, Bogdan Klein, Jacques-Olivier Nowak, Etienne Vianello, Elisa Portal, Jean-Michel Querlioz, Damien Front Neurosci Neuroscience The brain performs intelligent tasks with extremely low energy consumption. This work takes its inspiration from two strategies used by the brain to achieve this energy efficiency: the absence of separation between computing and memory functions and reliance on low-precision computation. The emergence of resistive memory technologies indeed provides an opportunity to tightly co-integrate logic and memory in hardware. In parallel, the recently proposed concept of a Binarized Neural Network, where multiplications are replaced by exclusive NOR (XNOR) logic gates, offers a way to implement artificial intelligence using very low precision computation. In this work, we therefore propose a strategy for implementing low-energy Binarized Neural Networks that employs brain-inspired concepts while retaining the energy benefits of digital electronics. We design, fabricate, and test a memory array, including periphery and sensing circuits, that is optimized for this in-memory computing scheme. Our circuit employs hafnium oxide resistive memory integrated in the back end of line of a 130-nm CMOS process, in a two-transistor, two-resistor cell, which allows the exclusive NOR operations of the neural network to be performed directly within the sense amplifiers. We show, based on extensive electrical measurements, that our design allows a reduction in the number of bit errors on the synaptic weights without the use of formal error-correcting codes. We design a whole system using this memory array. We show on standard machine learning tasks (MNIST, CIFAR-10, ImageNet, and an ECG task) that the system has inherent resilience to bit errors. We evidence that its energy consumption is attractive compared to more standard approaches and that it can use memory devices in regimes where they exhibit particularly low programming energy and high endurance. We conclude the work by discussing how it associates biologically plausible ideas with more traditional digital electronics concepts. Frontiers Media S.A. 2020-01-09 /pmc/articles/PMC6962102/ /pubmed/31998059 http://dx.doi.org/10.3389/fnins.2019.01383 Text en Copyright © 2020 Hirtzlin, Bocquet, Penkovsky, Klein, Nowak, Vianello, Portal and Querlioz. http://creativecommons.org/licenses/by/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms. |
spellingShingle | Neuroscience Hirtzlin, Tifenn Bocquet, Marc Penkovsky, Bogdan Klein, Jacques-Olivier Nowak, Etienne Vianello, Elisa Portal, Jean-Michel Querlioz, Damien Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays |
title | Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays |
title_full | Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays |
title_fullStr | Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays |
title_full_unstemmed | Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays |
title_short | Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays |
title_sort | digital biologically plausible implementation of binarized neural networks with differential hafnium oxide resistive memory arrays |
topic | Neuroscience |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6962102/ https://www.ncbi.nlm.nih.gov/pubmed/31998059 http://dx.doi.org/10.3389/fnins.2019.01383 |
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