Superior polarization retention through engineered domain wall pinning

Ferroelectric materials possess a spontaneous polarization that is switchable by an electric field. Robust retention of switched polarization is critical for non-volatile nanoelectronic devices based on ferroelectrics, however, these materials often suffer from polarization relaxation, typically wit...

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Detalles Bibliográficos
Autores principales: Zhang, Dawei, Sando, Daniel, Sharma, Pankaj, Cheng, Xuan, Ji, Fan, Govinden, Vivasha, Weyland, Matthew, Nagarajan, Valanoor, Seidel, Jan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6969134/
https://www.ncbi.nlm.nih.gov/pubmed/31953393
http://dx.doi.org/10.1038/s41467-019-14250-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6969134/
https://www.ncbi.nlm.nih.gov/pubmed/31953393
http://dx.doi.org/10.1038/s41467-019-14250-7

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