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Superior polarization retention through engineered domain wall pinning
Ferroelectric materials possess a spontaneous polarization that is switchable by an electric field. Robust retention of switched polarization is critical for non-volatile nanoelectronic devices based on ferroelectrics, however, these materials often suffer from polarization relaxation, typically wit...
Autores principales: | Zhang, Dawei, Sando, Daniel, Sharma, Pankaj, Cheng, Xuan, Ji, Fan, Govinden, Vivasha, Weyland, Matthew, Nagarajan, Valanoor, Seidel, Jan |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6969134/ https://www.ncbi.nlm.nih.gov/pubmed/31953393 http://dx.doi.org/10.1038/s41467-019-14250-7 |
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