Wurtzite AlGaAs Nanowires

Semiconducting nanowires, unlike bulk, can be grown in both wurtzite and zincblende crystal phases. This unique feature allows for growth and investigation of technologically important and previously unexplored materials, such as wurtzite AlGaAs. Here we grow a series of wurtzite AlGaAs nanowires wi...

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Autores principales: Leandro, L., Reznik, R., Clement, J. D., Repän, J., Reynolds, M., Ubyivovk, E. V., Shtrom, I. V., Cirlin, G., Akopian, N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6971003/
https://www.ncbi.nlm.nih.gov/pubmed/31959825
http://dx.doi.org/10.1038/s41598-020-57563-0
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author Leandro, L.
Reznik, R.
Clement, J. D.
Repän, J.
Reynolds, M.
Ubyivovk, E. V.
Shtrom, I. V.
Cirlin, G.
Akopian, N.
author_facet Leandro, L.
Reznik, R.
Clement, J. D.
Repän, J.
Reynolds, M.
Ubyivovk, E. V.
Shtrom, I. V.
Cirlin, G.
Akopian, N.
author_sort Leandro, L.
collection PubMed
description Semiconducting nanowires, unlike bulk, can be grown in both wurtzite and zincblende crystal phases. This unique feature allows for growth and investigation of technologically important and previously unexplored materials, such as wurtzite AlGaAs. Here we grow a series of wurtzite AlGaAs nanowires with Al content varying from 0.1 to 0.6, on silicon substrates and through a comparative structural and optical analysis we experimentally derive, for the first time, the formula for the bandgap of wurtzite AlGaAs. Moreover, bright emission and short lifetime of our nanowires suggest that wurtzite AlGaAs is a direct bandgap material.
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spelling pubmed-69710032020-01-27 Wurtzite AlGaAs Nanowires Leandro, L. Reznik, R. Clement, J. D. Repän, J. Reynolds, M. Ubyivovk, E. V. Shtrom, I. V. Cirlin, G. Akopian, N. Sci Rep Article Semiconducting nanowires, unlike bulk, can be grown in both wurtzite and zincblende crystal phases. This unique feature allows for growth and investigation of technologically important and previously unexplored materials, such as wurtzite AlGaAs. Here we grow a series of wurtzite AlGaAs nanowires with Al content varying from 0.1 to 0.6, on silicon substrates and through a comparative structural and optical analysis we experimentally derive, for the first time, the formula for the bandgap of wurtzite AlGaAs. Moreover, bright emission and short lifetime of our nanowires suggest that wurtzite AlGaAs is a direct bandgap material. Nature Publishing Group UK 2020-01-20 /pmc/articles/PMC6971003/ /pubmed/31959825 http://dx.doi.org/10.1038/s41598-020-57563-0 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Leandro, L.
Reznik, R.
Clement, J. D.
Repän, J.
Reynolds, M.
Ubyivovk, E. V.
Shtrom, I. V.
Cirlin, G.
Akopian, N.
Wurtzite AlGaAs Nanowires
title Wurtzite AlGaAs Nanowires
title_full Wurtzite AlGaAs Nanowires
title_fullStr Wurtzite AlGaAs Nanowires
title_full_unstemmed Wurtzite AlGaAs Nanowires
title_short Wurtzite AlGaAs Nanowires
title_sort wurtzite algaas nanowires
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6971003/
https://www.ncbi.nlm.nih.gov/pubmed/31959825
http://dx.doi.org/10.1038/s41598-020-57563-0
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