Highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition

Degenerately doped ZnO is seen as a potential substitute to the ubiquitous and expensive Sn doped In(2)O(3) as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO thin films were grown via aerosol assisted chemical vapor deposition. The lowest resi...

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Detalles Bibliográficos
Autores principales: Ponja, Sapna D., Sathasivam, Sanjayan, Parkin, Ivan P., Carmalt, Claire J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6971236/
https://www.ncbi.nlm.nih.gov/pubmed/31959884
http://dx.doi.org/10.1038/s41598-020-57532-7
Descripción
Sumario:Degenerately doped ZnO is seen as a potential substitute to the ubiquitous and expensive Sn doped In(2)O(3) as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO thin films were grown via aerosol assisted chemical vapor deposition. The lowest resistivity (7.8 × 10(−4) Ω.cm) and highest carrier concentration (4.23 × 10(20) cm(−3)) ever reported for AACVD grown ZnO: Ga was achieved due to using oxygen poor growth conditions enabled by diethylzinc and triethylgallium precursors.

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