Highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition

Degenerately doped ZnO is seen as a potential substitute to the ubiquitous and expensive Sn doped In(2)O(3) as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO thin films were grown via aerosol assisted chemical vapor deposition. The lowest resi...

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Autores principales: Ponja, Sapna D., Sathasivam, Sanjayan, Parkin, Ivan P., Carmalt, Claire J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6971236/
https://www.ncbi.nlm.nih.gov/pubmed/31959884
http://dx.doi.org/10.1038/s41598-020-57532-7
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author Ponja, Sapna D.
Sathasivam, Sanjayan
Parkin, Ivan P.
Carmalt, Claire J.
author_facet Ponja, Sapna D.
Sathasivam, Sanjayan
Parkin, Ivan P.
Carmalt, Claire J.
author_sort Ponja, Sapna D.
collection PubMed
description Degenerately doped ZnO is seen as a potential substitute to the ubiquitous and expensive Sn doped In(2)O(3) as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO thin films were grown via aerosol assisted chemical vapor deposition. The lowest resistivity (7.8 × 10(−4) Ω.cm) and highest carrier concentration (4.23 × 10(20) cm(−3)) ever reported for AACVD grown ZnO: Ga was achieved due to using oxygen poor growth conditions enabled by diethylzinc and triethylgallium precursors.
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spelling pubmed-69712362020-01-27 Highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition Ponja, Sapna D. Sathasivam, Sanjayan Parkin, Ivan P. Carmalt, Claire J. Sci Rep Article Degenerately doped ZnO is seen as a potential substitute to the ubiquitous and expensive Sn doped In(2)O(3) as a transparent electrode in optoelectronic devices. Here, highly conductive and transparent Ga doped ZnO thin films were grown via aerosol assisted chemical vapor deposition. The lowest resistivity (7.8 × 10(−4) Ω.cm) and highest carrier concentration (4.23 × 10(20) cm(−3)) ever reported for AACVD grown ZnO: Ga was achieved due to using oxygen poor growth conditions enabled by diethylzinc and triethylgallium precursors. Nature Publishing Group UK 2020-01-20 /pmc/articles/PMC6971236/ /pubmed/31959884 http://dx.doi.org/10.1038/s41598-020-57532-7 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Ponja, Sapna D.
Sathasivam, Sanjayan
Parkin, Ivan P.
Carmalt, Claire J.
Highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition
title Highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition
title_full Highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition
title_fullStr Highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition
title_full_unstemmed Highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition
title_short Highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition
title_sort highly conductive and transparent gallium doped zinc oxide thin films via chemical vapor deposition
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6971236/
https://www.ncbi.nlm.nih.gov/pubmed/31959884
http://dx.doi.org/10.1038/s41598-020-57532-7
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